Inkjet printing high mobility indium-zinc-tin oxide thin film transistor
Ze-Xian Zhao,Meng Xu,Cong Peng,Han Zhang,Long-Long Chen,Jian-Hua Zhang,Xi-Feng Li,School of Materials Science and Engineering, Shanghai University, Shanghai 200072, China,Key Laboratory of Advanced Display and System Application of Ministry of Education, Shanghai University, Shanghai 200072, China
DOI: https://doi.org/10.7498/aps.73.20240361
IF: 0.906
2024-06-20
Acta Physica Sinica
Abstract:Author(s): Zhao Ze-Xian, Xu Meng, Peng Cong, Zhang Han, Chen Long-Long, Zhang Jian-Hua, Li Xi-Feng Metal oxide thin film transistor has been widely used in flat panel display industry because of its low leakage current, high mobility and large area uniformity. Besides, with the development of printed display technology, inkjet printing process can fabricate the customizable patterns on diverse substrates with no need of vacuum or lithography to be used, thus significantly reducing cost and receiving more and more attention. In this paper, we use inkjet printing technology to prepare a bottom gate bottom contact thin film transistor (TFT) by using indium-zinc-tin-oxide (IZTO) semiconductor. The surface morphology of the printed IZTO film is modified by adjusting the solvent composition and solute concentration of the printing precursor ink. The experimental result show that the use of binary solvents can effectively overcome the coffee ring shape caused by the accumulation of solute edge in the volatilization process of a single solvent, ultimately presenting a uniform and flat contour surface. Further increase in solute concentration is in favor of formation of convex surface topology. The reason for the formation of the flat surface of the oxide film is the balance between the inward Marangoni reflux of the solute and the outward capillary flow during volatilization. In addition, IZTO thin film transistor printed with binary solvents exhibits excellent electrical properties. The ratio of width/length = 50/30 exhibits a high on-off ratio of 1.21×10<sup<9< (v·s),="" 0.24="" 0.84="" 1000="" 16.6="" a="" active="" and="" are="" basic="" by="" can="" cm<sup<2<="" conditions="" contact="" dec.="" devices="" different="" electrode,="" field-effect="" film="" films="" flat="" for="" form="" good="" high="" high-mobility="" inkjet="" is="" layer="" leakage="" less="" low="" mixture="" mobility="" of="" oxide="" p="" path="" pattern="" prepared="" present="" print="" printing="" printing.="" provides="" ratios="" reach="" required="" resistances="" saturation="" simple="" solvent="" source="" subthreshold="" sup<="" sup<,="" surface="" swing="" tft="" than="" the="" therefore,="" thin="" threshold="" to="" topology,="" transistors="" transistors. Acta Physica Sinica. 2024 73(12): 128501. Published 2024-06-20</sup<9<>
physics, multidisciplinary