Fabrication Technology and Characteristics Research of the Acceleration Sensor Based on Li-Doped ZnO Piezoelectric Thin Films

Sen Li,Xiaofeng Zhao,Yinan Bai,Yi Li,Chunpeng Ai,Dianzhong Wen
DOI: https://doi.org/10.3390/mi9040178
IF: 3.4
2018-01-01
Micromachines
Abstract:An acceleration sensor based on piezoelectric thin films is proposed in this paper, which comprises the elastic element of a silicon cantilever beam and a piezoelectric structure with Li-doped ZnO piezoelectric thin films. The Li-doped ZnO piezoelectric thin films were prepared on SiO2/Si by radio frequency (RF) magnetron sputtering method. The microstructure and micrograph of ZnO piezoelectric thin films is analysed by a X-ray diffractometer (XRD), scanning electron microscope (SEM), X-ray photoelectron spectroscopy (XPS), and piezoresponse force microscopy (PFM), respectively. When the sputtering power of 220Wand Li-doped concentration of 5%, ZnO piezoelectric thin films have a preferred (002) orientation. The chips of the sensor were fabricated on the < 100> silicon substrate by micro-electromechanical systems (MEMS) technology, meanwhile, the proposed sensor was packaged on the printed circuit board (PCB). The experimental results show the sensitivity of the proposed sensor is 29.48 mV/g at resonant frequency (1479.8 Hz).
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