A High Overloaded Piezoresistive Accelerometer Based on SOI Materials with Cantilever Beam

ZHAO Yu-long,ZHAO Li-bo,JIANG Zhuang-de

DOI: https://doi.org/10.3969/j.issn.1004-1699.2006.05.227

2006-01-01

Abstract:Micro Electro-Mechanical System (MEMS) and integrated circuit technology were adopted to manufacture the Silicon-On-Insulator (SOI) solid piezoresistive silicon flat chip with high precision and sensitivity. Utilizing the dynamics analysis and finite element simulation, the accelerometer mechanical structure with high overloaded capability was designed. The way of glass powder sintering was used to package the SOI silicon gauge on the stress concentrated location of cantilever beam. The accelerometer was developed with the range of ±2000g and the overload capability of 30 times full scale. The sensor achieves high sensitivity and accuracy, the output value of full scale is up to 126.97mV/2V, and the static precision of the sensor is 0.86%FS.