Ultrasensitive 2D Bi 2 O 2 Se Phototransistors on Silicon Substrates.

Qundong Fu,Chao Zhu,Xiaoxu Zhao,Xingli Wang,Apoorva Chaturvedi,Chao Zhu,Xiaowei Wang,Qingsheng Zeng,Jiadong Zhou,Fucai Liu,Beng Kang Tay,Hua Zhang,Stephen J Pennycook,Zheng Liu

DOI: https://doi.org/10.1002/adma.201804945

IF: 29.4

2019-01-01

Advanced Materials

Abstract:2D materials are considered as intriguing building blocks for next-generation optoelectronic devices. However, their photoresponse performance still needs to be improved for practical applications. Here, ultrasensitive 2D phototransistors are reported employing chemical vapor deposition (CVD)-grown 2D Bi2O2Se transferred onto silicon substrates with a noncorrosive transfer method. The as-transferred Bi2O2Se preserves high quality in contrast to the serious quality degradation in hydrofluoric-acid-assisted transfer. The phototransistors show a responsivity of 3.5 x 10(4) A W-1, a photoconductive gain of more than 10(4), and a time response in the order of sub-millisecond. With back gating of the silicon substrate, the dark current can be reduced to several pA. This yields an ultrahigh sensitivity with a specific detectivity of 9.0 x 10(13) Jones, which is one of the highest values among 2D material photodetectors and two orders of magnitude higher than that of other CVD-grown 2D materials. The high performance of the phototransistor shown here together with the developed unique transfer technique are promising for the development of novel 2D-material-based optoelectronic applications as well as integrating with state-of-the-art silicon photonic and electronic technologies.