Ultrabroadband, Large Sensitivity Position Sensitivity Detector Based on a Bi2Te2.7Se0.3/Si Heterojunction and Its Performance Improvement by Pyro …

Shuang Qiao,Mingjing Chen,Yu Wang,Jihong Liu,Junfeng Lu,Fangtao Li,Guangsheng Fu,Shufang Wang,Kailiang Ren,Caofeng Pan

IF: 6.2

2019-01-01

Advanced Electronic Materials

Abstract:Bi2Te(/Se)3, as a novel topological insulator, is a prospective candidate for next‐generation spintronic and photoelectric devices. Here, A series of Bi2Te2.7Se0.3 films are successfully prepared on Si substrate with different thicknesses and used as a self‐powered light position sensitive detector (PSD) through the introduction of a lateral photovoltaic effect (LPE). Owing to its wide and strong absorption, the high surface mobility of the Bi2Te2.7Se0.3 layer, and the outstanding heterojunction quality, this PSD shows an unprecedentedly broadband photoresponse from ≈350 to ≈2200 nm and exhibits very good performance with ultralarge sensitivities (283.71 mV mm−1 at 532 nm, 137.4 mV mm−1 at 1064 nm, 38.91 mV mm−1 at 1550 nm, and 16.56 mV mm−1 at 2200 nm), perfect nonlinearity (<3%), and ultrafast response times (≈52.1 µs/≈70.2 µs), all of which are among or represent the best results reported until …