Abstract:We report a systematic study on the correlation of the electrical transport properties with the crystal phase and orientation of single-crystal InAs nanowires (NWs) grown by molecular-beam epitaxy. A new method is developed to allow the same InAs NW to be used for both the electrical measurements and transmission electron microscopy characterization. We find both the crystal phase, wurtzite (WZ) or zinc-blende (ZB), and the orientation of the InAs NWs remarkably affect the electronic properties of the field-effect transistors based on these NWs, such as the threshold voltage (VT), ON-OFF ratio, subthreshold swing (SS) and effective barrier height at the off-state (ΦOFF). The SS increases while VT, ON-OFF ratio, and ΦOFF decrease one by one in the sequence of WZ ⟨0001⟩, ZB ⟨131⟩, ZB ⟨332⟩, ZB ⟨121⟩, and ZB ⟨011⟩. The WZ InAs NWs have obvious smaller field-effect mobility, conductivities, and electron concentration at VBG = 0 V than the ZB InAs NWs, while these parameters are not sensitive to the orientation of the ZB InAs NWs. We also find the diameter ranging from 12 to 33 nm shows much less effect than the crystal phase and orientation on the electrical transport properties of the InAs NWs. The good ohmic contact between InAs NWs and metal remains regardless of the variation of the crystal phase and orientation through temperature-dependent measurements. Our work deepens the understanding of the structure-dependent electrical transport properties of InAs NWs and provides a potential way to tailor the device properties by controlling the crystal phase and orientation of the NWs.

In-Situ TEM Observation of Crystal Structure Transformation in InAs Nanowires at Atomic Scale.

In Situ TEM Observation of the Vapor–solid–solid Growth of <001̄> InAs Nanowires

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Dynamic Process of Phase Transition from Wurtzite to Zinc Blende Structure in InAs Nanowires.

In Situ Observation Of Zno Nanowire Growth On Zinc Film In Environmental Scanning Electron Microscope

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Synthesis of InAs nanowires via a low-temperature solvothermal route.

Au-catalysed Free-Standing Wurtzite Structured InAs Nanosheets Grown by Molecular Beam Epitaxy

Synthesis and Phase Transformation of In2se3 and Cuinse2 Nanowires

In-Situ Growth of ZnO Nano-Wire with Environmental Scanning Electron Microscope

E-beam-induced in Situ Structural Transformation in One-Dimensional Nanomaterials

In situ TEM investigation of indium oxide/titanium oxide nanowire heterostructures growth through solid state reactions

Constant-rate Dissolution of InAs Nanowires in Radiolytic Water Observed by in Situ Liquid Cell TEM

Palladium catalyzed defect-free zinc-blende structured InAs nanowires

Crystal Phase- and Orientation-Dependent Electrical Transport Properties of InAs Nanowires

In-situ TEM observation of preferential amorphization in single crystal Si nanowire

Catalyst-Free Heteroepitaxial MOCVD Growth of InAs Nanowires on Si Substrates

Crystal structure analysis of self-catalyzed InAs nanowire grown by MOCVD

Phase Selection in Self-catalyzed GaAs Nanowires

From Twinning to Pure Zincblende Catalyst-Free Inas(Sb) Nanowires

High-quality Epitaxial Wurtzite Structured InAs Nanosheets Grown in MBE.