Constant-rate Dissolution of InAs Nanowires in Radiolytic Water Observed by in Situ Liquid Cell TEM

Mei Sun,Xing Li,Zhiqiang Tang,Xianlong Wei,Qing Chen

DOI: https://doi.org/10.1039/c8nr04096f

IF: 6.7

2018-01-01

Nanoscale

Abstract:A constant dissolution rate of 1D nanowires is first observed by in situ liquid cell TEM.

What problem does this paper attempt to address?

In Situ TEM Observation of the Vapor–solid–solid Growth of <001̄> InAs Nanowires

Qiang Sun,Dong Pan,Meng Li,Jianhua Zhao,Pingping Chen,Wei Lu,Jin Zou

DOI: https://doi.org/10.1039/d0nr02892d

IF: 6.7

2020-01-01

Nanoscale

Abstract:In situ transmission electron microscopy characterization is a powerful method in investigating the growth mechanism of catalyst-induced semiconductor nanowires. By providing direct evidence on the crystal growth at the atomic level, a real-time in situ heating investigation was carried out on Au-catalyzed <001[combining macron]> InAs nanowires. It was found that the Au catalyst maintained itself in the solid form during the nanowire growth, and maintained a fixed epitaxial relationship with its underlying InAs nanowire, indicating the vapor-solid-solid mechanism. Importantly, the growth of <001[combining macron]> InAs nanowires through a layer-by-layer manner at the catalyst/nanowire interface is evident. This study provides direct insights into the vapor-solid-solid growth and clarified the growth mechanism of <001[combining macron]> III-V nanowires, which provides pathways in controlling the growth of <001[combining macron]> semiconductor nanowires.
Synthesis of InAs nanowires via a low-temperature solvothermal route.

Xiangxing Xu,Wei Wei,Xiaoming Qiu,Kehan Yu,Rongbiao Yu,Sanming Si,Guoqing Xu,Wei Huang,Bo Peng

DOI: https://doi.org/10.1088/0957-4484/17/14/012

IF: 3.5

2006-01-01

Nanotechnology

Abstract:InAs nanowires with diameters of 7-70 nm and lengths of up to several micrometres were synthesized by a new modified solvothermal method. The x-ray diffraction pattern showed that the InAs nanowires that were prepared had zinc blende and wurtzite structures. A combination of concentration-driven and ligand-aided solution-solid (LSS) growth mechanisms was used to explain the morphology evolution of the InAs nanowires. The preparation method features a low temperature (120-180 degrees C) and economical mass-production and is free of catalyst nanoparticles. It was believed that we have explored a promising path towards the synthesis of other morphology-controllable one-dimensional (1D) III-V group nano-materials. The structural stability of InAs nanowires during annealing was also studied.
In Situ Fabrication and Graphitization of Amorphous Carbon Nanowires and Their Electrical Properties

C. H. Jin,J. Y. Wang,Q. Chen,L.-M. Peng

DOI: https://doi.org/10.1021/jp057240r

2006-01-01

Abstract:Individual amorphous carbon nanowires (a-CNWs) were fabricated inside a transmission electron microscope (TEM) by the electron beam induced deposition (EBID) method, and the a-CNWs were graphitized in situ by introducing Fe particles into these a-CNWs and controlled movement of the Fe particles in these CNWs. Detailed structural characterizations and electrical measurements were carried out, and it was found that the current-induced movement of Fe particles has significant effects in purifying the as-fabricated a-CNW, transforming the a-CNW into a graphitized-CNW (g-CNW). Two-terminal current voltage characteristics measurements showed that the g-CNW has a very good electrical conductivity with a resistivity of about 5.3 X 10(-4) Omega cm, a current carrying capacity of at least 4.35 mA, and a current density of 4.6 x 10(8) A/cm(2), and these values are comparable to those of multiwalled carbon nanotubes. Field emission characteristics of both a-CNWs and g-CNWs were also measured, and their respective Fowler-Nordheim plots were found to have basically a linear form.
Ultrafast and Reversible Electrochemical Lithiation of InAs Nanowires Observed by In-Situ Transmission Electron Microscopy

xing li,dongdong xiao,hao zheng,xianlong wei,xiaoye wang,lin gu,yongsheng hu,tao yang,qing chen

DOI: https://doi.org/10.1016/j.nanoen.2015.12.018

IF: 17.6

2016-01-01

Nano Energy

Abstract:The electrochemical lithiation/delithiation processes of InAs nanowires (NWs) are studied by in-situ transmission electron microscopy. Our results indicate that InAs NWs have a fast lithiation speed of 275nm/s and a high lithium ion (Li-ion) diffusion coefficient of 2.49×10−8cm2/s at room temperature. Upon lithiation, the Li-ion insertion firstly results in severe lattice distortions of InAs NWs, and the formation of Li3As and LixIn through the conversion and alloying processes take place on further lithiation. A small volume expansion of 157% is observed in full lithiation and is attributed to the naturally formed surface oxide layer. During the delithiation process, volume contraction and the dealloying of LixIn take place. Induced by the alloying and dealloying of LixIn, the dark and bright strips along the basal plane of InAs NWs appear and disappear alternately during the lithiation–delithiation cycling. Our results provide important insights into the lithiation/delithiation mechanism of III–V group nanomaterials and are envisaged to be helpful for designing lithium ion battery anode materials with fast lithiation speed, small volume expansion and reversible lithiation/delithiation processes.
In Situ TEM Observation of Dissolution and Regrowth Dynamics of MoO2 Nanowires under Oxygen

Wentao Yuan,Jian Yu,Hengbo Li,Ze Zhang,Chenghua Sun,Yong Wang

DOI: https://doi.org/10.1007/s12274-016-1299-z

IF: 9.9

2016-01-01

Nano Research

Abstract:Direct observation of the dissolution behavior of nanomaterials could provide fundamental insight to understanding their anisotropic properties and stability. The dissolution mechanism in solution and vacuum has been well documented. However, the gas-involved dissolution and regrowth have seldom been explored and the mechanisms remain elusive. We report herein, an in situ TEM study of the dissolution and regrowth dynamics of MoO2 nanowires under oxygen using environmental transmission electron microscopy (ETEM). For the first time, oscillatory dissolution on the nanowire tip is revealed, and, intriguingly, simultaneous layer-by-layer regrowth on the sidewall facets is observed, leading to a shorter and wider nanowire. Combined with first-principles calculations, we found that electron beam irradiation caused oxygen loss in the tip facets, which resulted in changing the preferential growth facets and drove the morphology reshaping.
Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Xin Yan,Xia Zhang,Xiaomin Ren,Hui Huang,Jingwei Guo,Xin Guo,Minjia Liu,Qi Wang,Shiwei Cai,Yongqing Huang

DOI: https://doi.org/10.1021/nl202190n

IF: 10.8

2011-01-01

Nano Letters

Abstract:InAs quantum dots (QDs) are grown epitaxially on Au-catalyst-grown GaAs nanowires (NWs) by metal organic chemical vapor deposition (MOCVD). These QDs are about 10-30 nm in diameter and several nanometers high, formed on the {112} side facets of the GaAs NWs. The QDs are very dense at the base of the NW and gradually sparser toward the top until disappearing at a distance of about 2 μm from the base. It can be concluded that these QDs are formed by adatom diffusion from the substrate as well as the sidewalls of the NWs. The critical diameter of the GaAs NW that is enough to form InAs QDs is between 120 and 160 nm according to incomplete statistics. We also find that these QDs exhibit zinc blende (ZB) structure that is consistent with that of the GaAs NW and their edges are faceted along particular surfaces. This hybrid structure may pave the way for the development of future nanowire-based optoelectronic devices.
Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Dong Pan,Mengqi Fu,Xuezhe Yu,Xiaolei Wang,Lijun Zhu,Shuaihua Nie,Siliang Wang,Qing Chen,Peng Xiong,Stephan von Molnar,Jianhua Zhao

DOI: https://doi.org/10.1021/nl4040847

IF: 10.8

2014-01-01

Nano Letters

Abstract:Here we report the growth of phase-pure InAs nanowires on Si (111) substrates by molecular-beam epitaxy using Ag catalysts. A conventional one-step catalyst annealing process is found to give rise to InAs nanowires with diameters ranging from 4.5 to 81 nm due to the varying sizes of the Ag droplets, which reveal strong diameter dependence of the crystal structure. In contrast, a novel two-step catalyst annealing procedure yields vertical growth of highly uniform InAs nanowires ∼10 nm in diameter. Significantly, these ultrathin nanowires exhibit a perfect wurtzite crystal structure, free of stacking faults and twin defects. Using these high-quality ultrathin InAs nanowires as the channel material of metal-oxide-semiconductor field-effect transistor, we have obtained a high ION/IOFF ratio of ∼10(6), which shows great potential for application in future nanodevices with low power dissipation.
Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Wenna Du,Xiaoguang Yang,Huayong Pan,Xianghai Ji,Haiming Ji,Shuai Luo,Xingwang Zhang,Zhanguo Wang,Tao Yang

DOI: https://doi.org/10.1021/acs.nanolett.5b03587

IF: 10.8

2016-01-01

Nano Letters

Abstract:We describe the controlled growth of planar InAsSb nanowires (NWs) on differently oriented Si substrates without any foreign catalysts. Interestingly, the planar InAsSb NWs grew along four criss-crossed (110) directions on an [100]-oriented substrate, two (100) directions plus four (111) directions on an [110]-oriented substrate, and six equivalent (112) directions on an [111]-oriented substrate, which correspond to the projections of (111) family crystal directions on the substrate planes. High-resolution transmission electron microscopy (HRTEM) reveals that the NWs, experienced a transition from out-of-plane to in-plane growth at the early growth stage but still occurred on the {111} plane, which has the lowest surface energy among all the surfaces. Furthermore, the NWs exhibit a pure zinc-blende crystal structure without any defects. A growth model is presented to explain growth of the NWs. In addition, conductive atomic force microscopy shows that electrically rectifying p-n junctions form naturally between the planar InAsSb NWs and the p-type Si substrates. The results presented here could open up a new route way to fabricate highly integrated III-V nanodevices.
In-situ TEM Study of the Liquid-Phase Reaction of Ag Nanowires with a Sulfur Solution

Rong Genlan,Zhang Xinyi,Xu Yan,Zhang Yuegang

DOI: https://doi.org/10.6023/a16100562

2016-01-01

Abstract:Using transmission electron microscopy (TEM) to directly observe a dynamic chemical reaction process in liquid-phase environment is a big challenge because it is difficult to keep liquid reactants under vacuum. In this work, we reported a liquid-based cell that enables in-situ observation of a solution reaction process under TEM. The novel liquid cell design not only realizes the self-alignment of top/bottom windows, but also achieves an adjustable liquid layer thickness down to nanometer scale. The cell consists of top and bottom frames, both of which are fabricated from silicon wafers using conventional micro-fabrication techniques. The transparent observation windows are made of silicon nitride (SiNx) membranes. In a typical assembling process, an ethanol solution containing silver nanowires and an ethanol solution containing saturated sulfur were sequentially dropped into the liquid tank of the bottom-frame of a liquid cell by using 1 mL syringe. Then, the liquid tank was covered by the top-frame with a window direction of 90 degrees, and an epoxy was used to seal the edge between the top-frame and bottom-frame. Using this assembled liquid cell, we performed in-situ TEM observation of the chemical reaction between Ag nanowires and sulfur in ethanol solution. Additional ex-situ X-ray diffraction (XRD) and Raman spectroscopy were also performed to study the reaction intermediates and final products. Instead of a simple reaction process in which sulfur diffuses into Ag to form the final product of Ag2S, we found that the real reaction process involves the formation of a soluble intermediate phase (Ag2S4), which led to a partial dissolution of Ag nanowires in ethanol solution during reaction. These results well demonstrate that the in-situ TEM technique is a powerful tool to reveal the "real" chemical reaction mechanism. The experimental technique developed here could also be used to study a broad range of dynamic phenomena in liquid environment.
Rapid, facile synthesis of InSb twinning superlattice nanowires with a high-frequency photoconductivity response

Yinyin Qian,Kaijia Xu,Lanjun Cheng,Cunxin Li,Xingchen Wang

DOI: https://doi.org/10.1039/d1ra01903a

2021-05-28

Abstract:We present a self-seeded (with indium droplets) solution-liquid-solid (SLS) synthesis route for InSb nanowires (NWs) using commercially available precursors at a relatively low temperature of about 175 °C, which takes only 1 min upon the injection of reductant. Structural characterization reveals that the InSb nanowires are high quality and have twinning superlattice structures with periodically spaced twin planes along the growth direction of 〈111〉. Notably, we have measured an ultrafast conductivity lifetime in the NWs of just 9.1 ps utilizing time-resolved optical pump-terahertz probe (OPTP) spectroscopy, which may facilitate the development of high-frequency nanoscale integrated optoelectronic systems related to twinning superlattice structures.
In Situ Study of Wet Chemical Etching of ZnO Nanowires with Different Diameters and Polar Surfaces by LCTEM

Jiamin Tian,Mei Sun,Mengyu Hong,Bocheng Yu,Menglan Li,Yu Geng,Shuo Li,Yue Zhang,Zhihong Li,Qing Chen

DOI: https://doi.org/10.1039/d3nr00881a

IF: 6.7

2023-01-01

Nanoscale

Abstract:Understanding how nanomaterials evolve during the etching process is critical in many fields. Herein, the wet chemical etching process of zinc oxide (ZnO) nanowires is studied in situ in radiolytic water via liquid cell transmission electron microscopy (LCTEM). The dissolution rate of thin nanowires is constant with reducing diameter, while thick nanowires (with the original diameter being larger than 95 nm) show complicated etching behaviors. The dissolution rate of thick nanowires is constant at the first stage and then increases. Anisotropic etching occurs at both ends of thick nanowires and distinct tips are formed. Different polarities at the two ends of the nanowire lead to differently shaped tips and different tip formation processes. The arrangement of the sidewall cones determines the macroscopic angle of the final tips. The present results are important for understanding liquid phase etching behavior in different dimensions and with different polar ends.
In Situ Study Wet Chemical Etching of ZnO Nanowires with Different Diameter and Polar Surfaces by LCTEM

Jiamin Tian,Mei Sun,Mengyu Hong,Bocheng Yu,Menglan Li,Yu Geng,Shuo Li,Yue Zhang,Zhihong Li,Qing Chen

DOI: https://doi.org/10.1039/d3nr00881a

IF: 6.7

2023-04-15

Nanoscale

Abstract:Understanding how nanomaterials evolute during etching process is critical for many fields. In this work, wet chemical etching process of zinc oxide (ZnO) nanowires is in situ studied in radiolytic water by liquid cell transmission electron microscopy (LCTEM). The dissolution rate of thin nanowires is found to be constant with reducing diameter, while thick nanowires (with the original diameter being larger than 95 nm) show complicated etching behaviors. The dissolution rate of thick nanowires is found to be constant at the first stage and then increase. Anisotropic etching occurs at both the ends of thick nanowires and distinct tips are formed. Different polarities at the two ends of the nanowire lead to different shaped tips and different tip formation processes. The arrangement of the sidewall cones determines the macroscopic angle of the final tips. The present results would be important for understanding liquid phase etching behavior at different dimensions and with different polar ends.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology,chemistry
In-situ TEM observation of preferential amorphization in single crystal Si nanowire

Jiangbin Su,Xianfang Zhu

DOI: https://doi.org/10.1088/1361-6528/aab6eb

2017-12-08

Abstract:The nanoinstability of single crystal Si nanowire under focused electron beam irradiation was in-situ investigated at room temperature by transmission electron microscopy technique. It was observed that the Si nanowire amorphized preferentially from the surface towards the center with the increasing of electron dose. In contrast, in the center of the Si nanowire the amorphization seemed non-uniform and much more difficult accompanying with rotation of crystal grains and compression of d-spacing. Such a selectively preferential amorphization as athermally induced by the electron beam irradiation can be well accounted for by our proposed concepts of nanocurvature effect and energetic beam-induced athermal activation effect, while the classical knock-on mechanism and the electron beam heating effect seem inadequate to explain these processes. Furthermore, the findings revealed the difference of amorphization between Si nanowire and Si film under focused electron beam irradiation. Also, the findings have important implications for nanostability and nanoprocessing of future Si nanowire-based devices.

Mesoscale and Nanoscale Physics
ChemInform Abstract: A Safe Low Temperature Route to InAs Nanofibers.

Yi Xie,Ping Yan,Jun Lu,Wenzhong Wang,Yitai Qian

DOI: https://doi.org/10.1021/cm9903327

2010-01-01

ChemInform

Abstract:InAs nanofibers were prepared at 160 degrees C through a new route: 2InCl(3) + 6KBH(4) + 2As en 2InAs + 6KCl + 6BH(3) + 3H(2). The products were characterized as zinc blende phase by X-ray powder diffraction (XRD). Transmission electron microscopy (TEM) images showed that the products were polycrystalline fibers or near-single-crystal whiskers with widths of 15-100 nm and lengths of 150-1000 nm. There is trace indium coexisting with the products, indicating that the reaction proceeds through a metallic indium intermediate. When the reaction temperature was lowered to 120 degrees C, which is below the melting point of indium, spherical InAs nanocrystals with diameters of 20-50 nm were prepared. A solution-liquid-solid (SLS) mechanism is proposed for the fiber growth. The composition of the products was analyzed by X-ray photoelectron spectroscopy (XPS).
Growth of in As Nanowires with the Morphology and Crystal Structure Controlled by Carrier Gas Flow Rate

Ming Li,Jingyun Wang,Kan Li,Yingjie Xing,H. Q. Xu

DOI: https://doi.org/10.1016/j.jcrysgro.2015.08.006

IF: 1.8

2015-01-01

Journal of Crystal Growth

Abstract:We report on the growth of single crystal InAs nanowires on Si/SiOx substrates by chemical vapor deposition (CVD). Both pure zincblende InAs nanowires and twin superlattice InAs nanowires are produced. We demonstrate that the morphology and crystal structure of these nanowires can be controlled by tuning the H2 carrier gas flow rate in a CVD furnace and show that highly selected growth of twin superlattice nanowires are achieved at high carrier gas flow rates. Our work provides a new route to grow and phase-engineer single crystal InAs nanowires for a wide range of potential applications.
Dynamic Process of Phase Transition from Wurtzite to Zinc Blende Structure in InAs Nanowires.

He Zheng,Jian Wang,Jian Yu Huang,Jianbo Wang,Ze Zhang,Scott X. Mao

DOI: https://doi.org/10.1021/nl403240r

IF: 10.8

2013-01-01

Nano Letters

Abstract:In situ high-resolution transmission electron microscopy revealed the precipitation of the zinc-blende (ZB) structure InAs at the liquid/solid interface or liquid/solid/amorphous carbon triple point at high temperature. Subsequent to its precipitation, detailed analysis demonstrates unique solid to solid wurtzite (WZ) to ZB phase transition through gliding of sharp steps with Shockley partial dislocations. The most intriguing phenomenon was that each step is 6 {111} atomic layers high and the step migrated without any mechanical stress applied. We believe that this is the first direct in situ observation of WZ-ZB transition in semiconductor nanowires. A model was proposed in which three Shockley partial dislocations collectively glide on every two {0001} planes (corresponds to six atomic planes in an unit). The collective glide mechanism does not need any applied shear stress.
Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires

Alexandra C. Ford,Johnny C. Ho,Zhiyong Fan,Onur Ergen,Virginia Altoe,Shaul Aloni,Haleh Razavi,Ali Javey

DOI: https://doi.org/10.48550/arXiv.0807.0946

2008-07-07

Abstract:InAs nanowires have been actively explored as the channel material for high performance transistors owing to their high electron mobility and ease of ohmic metal contact formation. The catalytic growth of non-epitaxial InAs nanowires, however, has often relied on the use of Au colloids which is non-CMOS compatible. Here, we demonstrate the successful synthesis of high yield of crystalline InAs nanowires with high yield and tunable diameters by using Ni nanoparticles as the catalyst material on amorphous SiO2 substrates. The nanowires show superb electrical properties with field-effect electron mobility ~2,700 cm2/Vs and ION/IOFF >103. The uniformity and purity of the grown InAs nanowires are further demonstrated by large-scale assembly of parallel arrays of nanowires on substrates via the contact printing process that enables high performance, printable transistors, capable of delivering 5-10 mA ON currents (~400 nanowires).

Materials Science
<i>In Situ</i> Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Dong Pan,Huading Song,Shan Zhang,Lei Liu,Lianjun Wen,Dunyuan Liao,Ran Zhuo,Zhichuan Wang,Zitong Zhang,Shuai Yang,Jianghua Ying,Wentao Miao,Runan Shang,Hao Zhang,Jianhua Zhao

DOI: https://doi.org/10.1088/0256-307X/39/5/058101

2022-01-01

Chinese Physics Letters

Abstract:We demonstrate the in situ growth of ultra-thin InAs nanowires with an epitaxial Al film by molecular-beam epitaxy. Our InAs nanowire diameter (similar to 30 nm) is much thinner than before (similar to 100 nm). The ultra-thin InAs nanowires are pure phase crystals for various different growth directions. Transmission electron microscopy confirms an atomically abrupt and uniform interface between the Al shell and the InAs wire. Quantum transport study on these devices resolves a hard induced superconducting gap and 2e-periodic Coulomb blockade at zero magnetic field, a necessary step for future Majorana experiments. By reducing wire diameter, our work presents a promising route for reaching fewer sub-band regime in Majorana nanowire devices.
Large-scale synthesis of in2O3 nanowires and their characterization

Fanhao Zeng,Xiaozhong Zhang

2005-01-01

Materials Science Forum

Abstract:Large-scale single-crystalline In2O3 nanowires were successfully synthesized by simply evaporating the pure indium at 950°C. The as-synthesized products, characterized by XRD, SEM, and TEM, were pure, structurally uniform, and single crystalline with typical diameters of 10 to 100 nanometers and lengths of up to a few hundreds of micrometers. The growth mechanism of the nanowires also was discussed. © 2005 Trans Tech Publications, Switzerland.
Quantitatively in Situ Imaging Silver Nanowire Hollowing Kinetics

Le Yu,Zhongying Yan,Zhonghou Cai,Dongtang Zhang,Ping Han,Xuemei Cheng,Yugang Sun

DOI: https://doi.org/10.1021/acs.nanolett.6b03218

IF: 10.8

2016-01-01

Nano Letters

Abstract:We report the in situ investigation of the morphological evolution of silver nanowires to hollow silver oxide nanotubes using transmission X-ray microscopy (TXM). Complex silver diffusion kinetics and hollowing process via the Kirkendall effect have been captured in real time. Further quantitative X-ray absorption analysis reveals the difference between the longitudinal and radial diffusions. The diffusion coefficient of silver in its oxide nanoshell is, for the first time, calculated to be 1.2 X 10(-13) cm(2)/s from the geometrical parameters extracted from the TXM images.

Constant-rate Dissolution of InAs Nanowires in Radiolytic Water Observed by in Situ Liquid Cell TEM

In Situ TEM Observation of the Vapor–solid–solid Growth of <001̄> InAs Nanowires

Synthesis of InAs nanowires via a low-temperature solvothermal route.

In Situ Fabrication and Graphitization of Amorphous Carbon Nanowires and Their Electrical Properties

Ultrafast and Reversible Electrochemical Lithiation of InAs Nanowires Observed by In-Situ Transmission Electron Microscopy

In Situ TEM Observation of Dissolution and Regrowth Dynamics of MoO2 Nanowires under Oxygen

Growth of InAs Quantum Dots on GaAs Nanowires by Metal Organic Chemical Vapor Deposition.

Controlled Synthesis of Phase-Pure InAs Nanowires on Si(111) by Diminishing the Diameter to 10 Nm.

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

In-situ TEM Study of the Liquid-Phase Reaction of Ag Nanowires with a Sulfur Solution

Rapid, facile synthesis of InSb twinning superlattice nanowires with a high-frequency photoconductivity response

In Situ Study of Wet Chemical Etching of ZnO Nanowires with Different Diameters and Polar Surfaces by LCTEM

In Situ Study Wet Chemical Etching of ZnO Nanowires with Different Diameter and Polar Surfaces by LCTEM

In-situ TEM observation of preferential amorphization in single crystal Si nanowire

ChemInform Abstract: A Safe Low Temperature Route to InAs Nanofibers.

Growth of in As Nanowires with the Morphology and Crystal Structure Controlled by Carrier Gas Flow Rate

Dynamic Process of Phase Transition from Wurtzite to Zinc Blende Structure in InAs Nanowires.

Synthesis, Contact Printing, and Device Characterization of Ni-Catalyzed, Crystalline InAs Nanowires

<i>In Situ</i> Epitaxy of Pure Phase Ultra-Thin InAs-Al Nanowires for Quantum Devices

Large-scale synthesis of in2O3 nanowires and their characterization

Quantitatively in Situ Imaging Silver Nanowire Hollowing Kinetics