Abstract:Electrostatically defined nanoscale devices within 2D semiconductor heterostructures, especially van der Waals heterostructures, offer advantages such as uniformity and flexibility. Investigating MoS2/WSe2 heterostructures under split gate and middle gate control unveils unique electronic behavior, highlighting quantum confinement and precise electrostatic control, and advancing the understanding of 2D materials for future electronic devices. The exponential development in quantum phenomena is directly correlated with the decreasing size of nano‐semiconductor transistors. Consequently, the use of a quantum structure that deviates from traditional transistor types becomes imperative. Electrostatically defined nanoscale devices within 2D semiconductor heterostructures serve as foundational elements for diverse quantum electrical circuits. Van der Waals heterostructures, distinguished by atomically flat interfaces and inherent 2D characteristics, offer advantages such as large‐scale uniformity, flexibility, and portability over conventional bulk semiconductor heterostructures. Herein, the intricate electronic behavior of a MoS2/WSe2 encapsulated heterostructure governed by split‐gate and middle‐gate configurations is investigated, revealing a distinctive step‐like current profile at a low temperature of 77 K. The observed four regimes in the current highlight the impact of quantum confinement induced by reduced lateral dimensions, coupled with precise electrostatic confinement controlled by gate voltages. The temperature dependence of the phenomena emphasizes the role of thermal effects on carrier scattering mechanisms. In addition, the pinch‐off characteristics with different temperatures, middle‐gate voltages, and drain biases are explored. This study contributes to a deeper understanding of electrostatic effects in 2D transition metal dichalcogenide heterostructures and holds promise for the development of advanced electronic devices with tailored confinement for enhanced functionalities.

Negative Electro-conductance in Suspended 2D WS2 Nanoscale Devices.

Switching Electron Current In A Semiconductor Nanowire Via Controlling The Carrier Injection From The Electrode

Nanoscale confinement and control of excitonic complexes in a monolayer WSe2

Imaging Negative Charge around Single Vanadium Dopant Atoms in Monolayer Tungsten Diselenide Using 4D Scanning Transmission Electron Microscopy

Negative Differential Conductance and Hot Phonons in Suspended Nanotube Molecular Wires

Various and Tunable Transport Properties of Wse2 Transistor Formed by Metal Contacts

Probe the Effects of Surface Adsorbates on Zno Nanowire Conductivity Using Dielectric Force Microscopy

Exploring Electrostatic Confinement Transport in MoS2/WSe2 Heterostructure via Triple‐Gated Point Contact Device

High-Frequency Sheet Conductance of Nanolayered WS2 Crystals for Two-Dimensional Nanodevices

Optical Band Engineering of Monolayer WSe2 in a Scanning Tunneling Microscope

Nanoscale devices with superconducting electrodes to locally channel current in 3D Weyl semimetals

Electrical Breakdown of Suspended Mono- and Few-Layer Tungsten Disulfide Via Sulfur Depletion Identified by in Situ Atomic Imaging.

Engineering bandgaps of monolayer MoS2 and WS2 on fluoropolymer substrates by electrostatically tuned many-body effects

Observation of a 2D Electron Gas and the Tuning of the Electrical Conductance of ZnO Nanowires by Controllable Surface Band-Bending

Ultrafast Electron Cooling and Decay in Monolayer WS2 Revealed by Time- and Energy-Resolved Photoemission Electron Microscopy

Charge-transfer contacts for the measurement of correlated states in high-mobility WSe 2

Charge-transfer Contact to a High-Mobility Monolayer Semiconductor

Negative to Positive Crossover of Magnetoresistance in Layered WS2 with Ohmic Contact

Revealing Electronic Nature of Broad Bound Exciton Bands in Two-Dimensional Semiconducting WS2 and MoS2

Interference effects in electronic transport through metallic single-wall carbon nanotubes

Trap-state-dominated suppression of electron conduction in carbon nanotube thin-film transistors.