Abstract:Resistive random-access memory (RRAM) has been extensively investigated for 20 years due to its excellent advantages, including scalability, switching speed, compatibility with the complementary metal oxide semiconductor process, and neuromorphic computing application. However, the issue of memristor reliability for cycle to cycle and device to device resulting from the random ion drift and diffusion in solid-state thin films is still a great challenge for commercialization. Therefore, controlling the internal ionic process to improve the memristor performance and reliability is a primary and urgent task. Here, a Ni nanocone array prepared by an electrodeposition method is integrated with an Ag/Al2O3/Pt resistive switching device. The nanocone-array-based memristor yields superior switching performance, including an ultralow set voltage (-0.37 V), a concentrated voltage/resistance distribution (CV 14.8%/32.7%), robust endurance (>105 cycles), and multilevel storage capability. A finite element analysis, transmission electron microscope observation, and current mapping test indicate that the local enhancement of the electric field confines the ionic migration process and yields a predictable formation and dissolution process of the conductive filament. The nanocone-array-based RRAM device provides a new and feasible method to control the conductive filament growth reliably, which paves the way for memristor development.

Eliminating Negative-SET Behavior by Suppressing Nanofilament Overgrowth in Cation-Based Memory.

Analysis of the Negative-SET Behaviors in Cu/ZrO2/Pt Devices.

Improvement of Device Reliability by Introducing a BEOL-Compatible TiN Barrier Layer in CBRAM

Ferroelectric-carbon Nanotube Memory Devices.

Breaking the Current‐Retention Dilemma in Cation‐Based Resistive Switching Devices Utilizing Graphene with Controlled Defects

Stable and Repeatable Zro2 Rram Achieved by Nio Barrier Layer for Negative Set Phenomenon Elimination

Performance Enhancement and Mechanism Exploration of All-Carbon-nanotube Memory with Hydroxylation and Dehydration Through Supercritical Carbon Dioxide

Novel strategies for low-voltage NAND flash memory with negative capacitance effect

Self-Formed Conductive Nanofilaments in (bi, Mn)O-X for Ultralow-Power Memory Devices

Highly Improved Performance in Zr0.5Hf0.5O2 Films Inserted with Graphene Oxide Quantum Dots Layer for Resistive Switching Non-Volatile Memory

Modulating Metallic Conductive Filaments Via Bilayer Oxides in Resistive Switching Memory

Cu x S nanosheets with controllable morphology and alignment for memristor devices

Functionalized Graphitic Carbon Nitride for Metal-free, Flexible and Rewritable Nonvolatile Memory Device Via Direct Laser-Writing

Interface Engineering Via MoS2 Insertion Layer for Improving Resistive Switching of Conductive‐Bridging Random Access Memory

Performance and Retention Characteristics of Nanocrystalline Si Floating Gate Memory with an Al2O3 Tunnel Layer Fabricated by Plasma-Enhanced Atomic Layer Deposition

Memory Effects of Carbon Nanotube-Based Field Effect Transistors

Stable and repeatable ZrO 2 RRAM achieved by NiO barrier layer for negative set phenomenon elimination

Improved Uniformity in Resistive Switching Behaviors by Embedding Cu Nanodots.

A Sub-500 Mv Monolayer Hexagonal Boron Nitride Based Memory Device

Competition Between Metallic and Vacancy Defect Conductive Filaments in a CH3NH3PbI3-Based Memory Device

Ultralow Set Voltage and Enhanced Switching Reliability for Resistive Random-Access Memory Enabled by an Electrodeposited Nanocone Array.