Abstract:Field-effect transistors have been fabricated using single-walled carbon nanotubes (SWCNTs) and double-walled carbon nanotubes (DWCNTs), and their electrical transport properties have been studied comparatively. While a semiconducting SWCNT exhibits better field-effect characteristics than a DWCNT counterpart, the DWCNT shows more complicated response to external gate modulation. Depending on the nature of the two shells of a DWCNT, i.e., whether the shell is semiconducting (S) or metallic (M), a DWCNT device can be described as either S-S, or S-M, or M-S, or M-M. It was found that the S-S and M-M or M-S devices show similar field-effect characteristics to those found in SWCNT devices. But for S-M DWCNT devices, distinct field-effect characteristic was found and attributed to the combined effects of intershell interactions and screening by free carriers of the inner metallic shell. The S-M DWCNT devices thus provide a perfect system for studying the important intershell interaction, and information on the effect of this interaction on the electrical properties of a multi-walled carbon nanotube can be obtained by a comparative study of S-M DWCNT and S-SWCNT devices.

Fabrication and Characteristics of Metal Particle Modulated Carbon Nanotube Field-effect and Single Electron Transistors

Fabrication and Characterization of Gated Carbon Nanotube Emitters in A Trench Structure

Electrothermal Characterization of Carbon Nanotube Field Effect Transistors (Cntfets)

Fabrication of Nitrogen-doped Multi-walled Carbon Nanotube and Their Field Effect Transistor Properties

Carbon Nanotube Field Effect Transistors Based on Schottky Contact

Carbon Nanotube Field‐Effect Transistors: Towards Entire‐Carbon‐Nanotube Circuits: the Fabrication of Single‐Walled‐Carbon‐Nanotube Field‐Effect Transistors with Local Multiwalled‐Carbon‐Nanotube Interconnects (adv. Mater. 13/2009)

Carbon Nanotube Lateral Field Emission Device with Embedded Field Effect Transistor

All-Metallic High-Performance Field Effect Transistor Based on Telescoping Carbon Nanotubes: an Ab Initio Study

Fabrication and Characterization of the Performance of Multi-Channel Carbon-Nanotube Field-Effect Transistors

Fabrication of Carbon Nanotubes on Interdigitated Metal Electrode for Switchable Nanophotonic Devices

Fabrication and electrical characterization of multiwalled carbon nanotube-based circuit at room temperature

Field-effect Investigation on Single-walled Carbon Nanotube Array

Field-effect transistors assembled from functionalized carbon nanotubes

Field-effect Characteristics and Screening in Double-Walled Carbon Nanotube Field-Effect Transistors.

A comparative study on SWCNT and PWCNT field-effect transistors

Study on the Field-Effect Transistor Based on Pd/SWNT/Al Configuration

Femtosecond Laser Treatment of SWNT Onto Metal Electrodes and Its Effect on Carbon Nanotube Field Effect Transistor

Fabrication and Properties of Double Gated Double Walled Carbon Nanotube Field Effect Transistors

Fabrication of Single-Walled Carbon-Nanotube with Metallic Electrodes

Fabrication and Characterization of Single Carbon Nanotube Emitters As Point Electron Sources

Carbon Nanotube Electronics: Recent Advances