Abstract:SiON becomes a kind of new functional material because it has manyexcellent mechanical and chemical properties such as high hardness,corrosion resistance, oxidization resistance. It is reported thatthe coating of SiON has many important applications in optical device.For example, it can be used as the protective layer of Edmund optics,touch panel of mobile phone, waveguide tube et al. the Mohs hardnessof SiON is about 9H. In addition, the transmittance of the coatingis 98% in the visible region. Lately, lots of researchers are interestedin the biomedical applications of SiON coatings due to its favourablemechanical properties and the good hemocompatibility of the material.Such as hip implants, it can help patient recover soon because thecoating is smooth and the Si–N and Si–O–N chemicalbonding are more to the hydrophilicity than Si–O or Si–Sibonds. There is also lots of significant application of SiON filmsin the field of microelectronics. According to the reports, SiON hasthe inhibiting effect on hot-carrier injection, impurity diffusionand water vapor permeability. As the dielectric layer, SiON also possessesbetter electronic mobility and the trap densities of electron. Sofar, the main synthetic method of SiON is plasma enhanced chemicalvapor deposition (PECVD) including inductive coupled plasma source(ICP), capacitive coupled plasma source (CCP) and microwave electroncyclotron resonance (ECR). It is found that selectivity of PECVD isbad along with the further study of it. In addition, the SiON dielectriclayer contains impurities unavoidably, for example, it will affectthe insulation and dielectric properties if adding H atom into thedielectric layer, which can restrict application in large scale integratedcircuit. Helicon wave plasma source (HWP) comes to the notice of manyresearchers because of its high density (about 10 13 cm -3 ) at low pressure (0.1~10 Pa). Chen said that “Interestin helicon discharges stems from their unusually high ionization efficiency:plasma densities n achieved are almost an order of magnitude higherthan in other discharges at comparable pressures and input powers.”During the discharge, high-energy electron collides with gas particleadequately. In this experiment, it can divide N 2 into N 2 + efficiently along with steady-state helicon wavedischarge. In addition, there is no impurity element mixed in theSiON (such as C, H) which can improve the quality of the SiON films.In this experiment, SiON films were synthesized by nitridation onthe surface of Si sputtered by N 2 /Ar helicon-wave plasma.During the mixed helicon-wave discharge, the mass flow ratio of N 2 and Ar was different. X-ray photoelectron spectroscopy (XPS)showed that the SiON films were constituted of Si–O–Nand Si–N. Atom force microscopy (AFM) indicated that the surfaceof the film was very flat and smooth, and the RMS was less than 1.2nm. We collected Plasma discharge parameters by optical emission spectroscopy(OES) when the Si wafer was sputtered using N 2 /Ar helicon-waveplasma, and studied the relationship between the particle in the plasmaand structure of SiON films.

One-Step Synthesis of Silicon Oxynitride Films Using a Steady-State and High-Flux Helicon-Wave Excited Nitrogen Plasma

Properties of "stoichiometric" Silicon Oxynitride Films

Synthesis of SiON films by helicon-wave plasma and their characteristic analysis

Non-equilibrium,Atmospheric-pressure Plasma Jet for Depositing Silicon Oxide Films

Growth of Silicon Oxynitride Films by Atmospheric Pressure Plasma Jet

A High-Activity Nitrogen Plasma Flow Source for Deposition of Silicon Nitride Films

Nitrogen Enhanced Oxygen Precipitation in Czochralski Silicon Wafers Coated with Silicon Nitride Films

Deposition of SiOxNy films as gate insulator via r.f. reactive sputtering

Remote Plasma Atomic Layer Deposition of SiNx Using Cyclosilazane and H2/N2 Plasma

Silicon nitride films synthesized by reactive pulsed laser deposition in an electron cyclotron resonance nitrogen plasma

Optical and structural properties of silicon oxynitride deposited by plasma enhanced chemical vapor deposition

Effect of N_2O Plasma Treatment on Luminescence of Silicon-rich Silicon Nitride Films

Measurements Of Microstructural, Chemical, Optical, And Electrical Properties Of Silicon-Oxygen-Nitrogen Films Prepared By Plasma-Enhanced Atomic Layer Deposition

Preparation and Photoluminescence of Nanocrystalline Si-Rich Silicon Oxide Films by Pecvd

High Quality of Ultra-Thin SiOxNyFilms Prepared in Nitrous Oxide Ambients Using Thermal Low-Pressure Oxynitridation

Study of the Growth of Thin Nitride Films under Low-Energy Nitrogen-Ion Bombardment

Nitridation Of Silicon With Ammonia And Nitrogen

Silicon oxynitride thin films by plasma-enhanced atomic layer deposition using a hydrogen-free metal-organic silicon precursor and N 2 plasma

Silicon-Oxygen Nanocrystalline Composite Films(nc-SiOx:H)Directly Deposited by Plasma Enhanced Chemical Vapor Deposition

High-flux Ion Irradiation with Energy of ∼20ev Affecting Phase Segregation and Low-Temperature Growth of Nc‐tin∕a‐si3n4 Nanocomposite Films

Angle-Resolved X-ray Photoelectron Spectroscopy intensity modeling of SiN x ultrathin layer grown on Si (100) and Si (111) substrates by N 2 plasma treatment