Metal-assisted exfoliation of few-layer black phosphorus with high yield.

Liao Guan,Boran Xing,Xinyue Niu,Dan Wang,Ying Yu,Shucheng Zhang,Xiaoyuan Yan,Yewu Wang,Jian Sha
DOI: https://doi.org/10.1039/c7cc08488a
IF: 4.9
2018-01-01
Chemical Communications
Abstract:We introduce a metal-assisted exfoliation method to produce few-layer black phosphorus with the lateral size larger than 50 mu m and the area 100 times larger than those exfoliated using the normal "scotch-tape" technique. Using a field effect transistor it was found the hole mobility is 68.6 cm(2) V-1 s(-1) and the current on/off ratio can reach about 2 x 10(5).
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