Stable resistive switching characteristics of ZrO2-based memory device with low-cost

Liping Fu,Yingtao Li,Genliang Han,Xiaoping Gao,Chuanbing Chen,Peng Yuan

DOI: https://doi.org/10.1016/j.mee.2017.02.019

IF: 2.3

2017-01-01

Microelectronic Engineering

Abstract:The stabilization of the resistive switching characteristics at both room temperature (RT) and 85C of the ZrO2-based resistive random access memory were investigated for nonvolatile memory applications. In both conditions, the sandwiched aluminum top electrode/ZrO2 thin films with embedded copper layer/aluminum bottom electrode structure devices exhibited reproducible bipolar resistive switching behavior and reliable data retention (little degradation over 105 and 104s at RT and 85C, respectively). For the fabricated device, both the bottom electrode and top electrode materials are fabricated from Al with reduced material cost. Furthermore, the ZrO2 and embedded Cu materials also show good compatibility with the current CMOS technology to further reduce cost. The conduction mechanism of the low resistance state (LRS) is dominated by ohmic conduction, whereas the high resistance state (HRS) conduction is dominated by space charge limited conduction (SCLC). Our study shows that the memory device with high uniformity and good stabilization at both RT and 85C is a promising candidate for low-cost nonvolatile memory device applications.