Abstract:This work reports in first time a 100-Gb/s, ultra-low noise, variable gain multi-stagger tuned transimpedance amplifier (VGMST-TIA) over the D-band performance. The whole work is binding into two phases. The first phase involves the modeling and characterization of graphene field-effect transistor (GFET) with an optimized transition frequency of operation. While in the second phase, a TIA design employs a T-shaped symmetrical L-R network at the input, which mitigates the effect of photo diode capacitance and achieves a D-band of operation. The proposed work uses a VGMST to establish TIA, which realizes optimum noise performance. The high gain 3-stage VGMST-TIA effectively minimizes the white noise and illustrates a sharp out-of-band roll-off to achieve considerable noise reduction at high frequencies. The active feedback mechanism controls the transimpedance gain by tuning the control voltage which results better group delay. Besides, an L-C circuit is employed at the output to enhance bandwidth. The full TIA is implemented and fabricated using a commercial nano-manufacturing 9-nm graphene film FET on a silicon wafer using 0.065-μm process. The TIA achieves a flat transimpedance gain of 61.2 dBΩ with ± 9 ps group delay variation over the entire bandwidth. The proposed TIA measured an impedance bandwidth of 0.2 THz with ultra-low input-referred noise current density of 2.03 pA/√Hz. The TIA supports a 100-Gb/s data transmission due to large bandwidth; therefore, a bit-error-rate (BER) less than 10<sup>−12</sup> is achieved. The chip occupies an area of 0.92 * 1.34 mm<sup>2</sup> while consuming power of 21 mW under supply of 1.8 V.

A Single-to-differential Broadband Transimpedance Amplifier for 12.5 Gb/s Optical Links.

An Inductorless Transimpedance Amplifier Design for 10 Gb/s Optical Communication Using 0.18-Μm CMOS

An Inductorless 5-GHz Differential Dual Regulated Cross-Cascode Transimpedance Amplifier using 40 nm CMOS

Design of Differential Variable-Gain Transimpedance Amplifier in 0.18 Μm SiGe BiCMOS

A 2.5 Gb/s CMOS Low Noise Transimpedance Amplifier with Active Feedback

A Linear Differential Transimpedance Amplifier for 100-Gb/s Integrated Coherent Optical Fiber Receivers

A 20-Gb/s CMOS Cross-Coupled Dual-Feedback Loop Transimpedance Amplifier

A 29.5 Dbm OOB IIP3 TIA Based on a Two-Stage Pseudo-Differential OTA with R-C Compensation and Cascode Negative Resistance

A 50mhz Bandwidth TIA Based on Two Stage Pseudo-Differential OTA with Cascode Negative Resistance and R-C Compensation Technique

Area-efficient CMOS transimpedance amplifier for optical receivers

A Compact 2.1–39 GHz Self-Biased Low-Noise Amplifier in 65 Nm CMOS Technology

A Three Stage, Fully Differential 128–157 GHz CMOS Amplifier with Wide Band Matching

A Hybrid Integrated TIA and PD for 20-Gb/s Optical Receivers

A 50-MHz Bandwidth and 50.6-dBm OOB-IIP3 Transimpedance Amplifier Based on a Three-Stage Pseudo-Differential OTA

CMOS 1.4 THzΩ 155 Mb/s differential transimpedance preamplifier for optical receiver

Co-design of a Differential Transimpedance Amplifier and Balanced Photodetector for a Sub-Pj/bit Silicon Photonics Receiver.

A 12.5 Gb/s 1.38 mW all-inverter-based optical receiver with multi-stage feedback TIA and continuous-time linear equalizer

Broad-Band Design Techniques for Transimpedance Amplifiers

Inductor-Less Low-Power Low-Voltage Cross-Coupled Regulated-Cascode Transimpedance Amplifier Circuit in CMOS Technology

A 61.2-dBΩ, 100 Gb/s Ultra-Low Noise Graphene TIA over D-Band Performance for 5G Optical Front-End Receiver

Large Bandwidth RGC Transimpedance Preamplifier Design in SCA