Abstract:The growing importance of applications based on machine learning is driving the need to develop dedicated, energy-efficient electronic hardware. Compared with von Neumann architectures, which have separate processing and storage units, brain-inspired in-memory computing uses the same basic device structure for logic operations and data storage<a href="#ref-CR1">1</a>,<a href="#ref-CR2">2</a>,<a href="/articles/s41586-020-2861-0#ref-CR3">3</a>, thus promising to reduce the energy cost of data-centred computing substantially<a href="/articles/s41586-020-2861-0#ref-CR4">4</a>. Although there is ample research focused on exploring new device architectures, the engineering of material platforms suitable for such device designs remains a challenge. Two-dimensional materials<a href="/articles/s41586-020-2861-0#ref-CR5">5</a>,<a href="/articles/s41586-020-2861-0#ref-CR6">6</a> such as semiconducting molybdenum disulphide, MoS2, could be promising candidates for such platforms thanks to their exceptional electrical and mechanical properties<a href="#ref-CR7">7</a>,<a href="#ref-CR8">8</a>,<a href="/articles/s41586-020-2861-0#ref-CR9">9</a>. Here we report our exploration of large-area MoS2 as an active channel material for developing logic-in-memory devices and circuits based on floating-gate field-effect transistors (FGFETs). The conductance of our FGFETs can be precisely and continuously tuned, allowing us to use them as building blocks for reconfigurable logic circuits in which logic operations can be directly performed using the memory elements. After demonstrating a programmable NOR gate, we show that this design can be simply extended to implement more complex programmable logic and a functionally complete set of operations. Our findings highlight the potential of atomically thin semiconductors for the development of next-generation low-power electronics.

Robust Ultra-Low Power Non-Volatile Logic-in-Memory Circuits in FD-SOI Technology.

Exploring Hybrid STT-MTJ/CMOS Energy Solution in Near-/Sub-Threshold Regime for IoT Applications

Exploiting Ferroelectric FETs for Low-Power Non-Volatile Logic-in-memory Circuits

Energy Efficient Magnetic Tunnel Junction Based Hybrid LSI Using Multi-Threshold UTBB-FD-SOI Device.

A Fully Logic CMOS Compatible Non-Volatile Memory for Low Power IoT Applications

STT-MRAM Based Low Power Synchronous Non-Volatile Logic with Timing Demultiplexing

A Programmable Logic-in-Memory Architecture Based on 22nm Fully DepletedSilicon on Insulator Technology.

Low Power Computing Using STT-MRAM

A Low-Power Low-VDD Nonvolatile Latch Using Spin Transfer Torque MRAM

A Dual Core Oxide 8T SRAM Cell with Low Vccmin and Dual Voltage Supplies in 45nm Triple Gate Oxide and Multi Vt CMOS for Very High Performance Yet Low Leakage Mobile SoC Applications

Ferroelectric FETs-Based Nonvolatile Logic-in-Memory Circuits

Low Power Magnetic Flip-Flop Optimization With Fdsoi Technology Boost

Multi-Input Logic-in-Memory for Ultra-Low Power Non-Von Neumann Computing

Synchronous 8-Bit Non-Volatile Full-Adder Based on Spin Transfer Torque Magnetic Tunnel Junction

Design of high-speed, low-power non-volatile master slave flip flop (NVMSFF) for memory registers designs

Logic-in-memory based on an atomically thin semiconductor

New non-volatile logic based on spin-MTJ

Ultra-Low Power Static Logic Circuits Design in Subthreshold Region

Design Optimization and Analysis of Multicontext STT-MTJ/CMOS Logic Circuits

Reconfigurable aJ-Level Ferroelectric Transistor-Based Boolean Logic for Logic-in-Memory

Efficient and Robust Nonvolatile Computing-In-Memory Based on Voltage Division in 2T2R RRAM with Input-Dependent Sensing Control