Plasmonically-boosted exciton-photon coupling strength in a near-infrared LED based on ZnO:Ga microwire/GaAs heterojunction with surface-coated Au & Ag Alloy nanorods
Lixiang Sun,Mingming Jiang,Kai Tang,Peng Wan,Maosheng Liu,Daning Shi,Caixia Kan
DOI: https://doi.org/10.1039/d4cp03265a
IF: 3.3
2024-09-25
Physical Chemistry Chemical Physics
Abstract:The advancement of developing electrically-driven low-dimensional coherent light sources via highly-polarized polariton emission behavior has been extensively researched, but suffering from the limitation of modulating the exciton-photon coupling strengths. Herein, electrically-biased near-infrared exciton-polariton light-emitting diode (LED), which includes a Ga-doped ZnO microwire (ZnO:Ga MW) and p-type GaAs substrate, is displayed. The well-designed LED structure is conducive to produce strong coupling between excitons and cavity photons, thus yielding highly-polarized light-emissions due to the optical birefringence in the ZnO:Ga MW microcavity. Particularly, as the LED device is modified using Au & Ag alloy nanorods (AuAgNRs) with given plasmons, the electroluminescence (EL) performances, especially for the Rabi-splitting energies, are significantly boosted from 96 to 285 meV. The current-injection exciton-polariton emission from the LED undergoing strong coupling regime is confirmed through angle-resolved EL measurements. This study exhibit performance-boosted near-infrared exciton-polariton LED at room temperature, which provides a new scheme toward the realization of high energy-efficient polariton coherent light sources. Further, the significantly lower density of polariton states induced by incorporated metal nanostructures can highlight the bright future of realizing ultralow-threshold polariton lasers much more feasible by comparing to conventional lasers based on narrow bandgap semiconductors.
chemistry, physical,physics, atomic, molecular & chemical