Abstract:Light emission from semiconductors depends not only on the efficiency of carrier injection and recombination but also extraction efficiency. For ultraviolet emission from high band gap materials such as ZnO, nanowires have higher extraction efficiencies than thin films, but conventional approaches for creating a p-n diode result in low efficiency. We exploited the noncentral symmetric nature of n-type ZnO nanowire/p-type GaN substrate to create a piezoelectric ! potential within the nanowire by applying stress. Because of the polarization of ions in a crystal that has noncentral symmetry, a piezoelectric potential (piezopotential) is created in the crystal under stress. The piezopotential acts as a "gate" voltage to tune the charge transport and enhance carrier injection, which is called the piezo-phototronic effect. We propose that band modification traps free carriers at the interface region in a channel created by the local piezoelectric charges. The emission intensity and injection current at a fixed applied voltage have been enhanced by a factor of 17 and 4, respectively, after applying a 0.093% compressive strain and improved conversion efficiency by a factor of 4.25. This huge enhanced performance is suggested arising from an effective increase in the local "biased voltage" as a result of the band modification caused by piezopotential and the trapping of holes at the interface region in a channel created by the local piezoelectric charges near the interface. Our study can be extended from ultraviolet range to visible range for a variety of optoelectronic devices that are important for today's safe, green, and renewable energy technology.

Exciton Localization and Ultralow Onset Ultraviolet Emission in ZnO Nanopencils-Based Heterojunction Diodes.

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Largely Enhanced Efficiency In Zno Nanowire/P-Polymer Hybridized Inorganic/Organic Ultraviolet Light-Emitting Diode By Piezo-Phototronic Effect

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Ultraviolet Electroluminescence from Zno/P-Si Heterojunctions

Electroluminescence from ZnO/n<sup>+</sup>-Si Heterojunction

Recent progress in ZnO-based heterojunction ultraviolet light-emitting devices

Light-Emitting Diodes Based on p-GaN/i-ZnO/n-ZnO Heterojunctions

Electroluminescence from ZnO Nanowires with a P-Zno Film/n-Zno Nanowire Homojunction

Ultraviolet Electroluminescence From n-ZnO–SiO$_{2}$–ZnO Nanocomposite/p-GaN Heterojunction Light-Emitting Diodes at Forward and Reverse Bias

Fabrication of tunable n-Zn1-xCdxO/p-GaN heterojunction light-emitting diodes

Full‐Color Electroluminescence from ZnO‐Nanoparticles‐based Homojunction Diodes

Bidirectional Direct-Current Electroluminescence from I-Mgxzn1−xo/n-zno/siox Double-Barrier Heterostructures on Si

Single ZnO nanowire/p-type GaN heterojunctions for photovoltaic devices and UV light-emitting diodes.

Ultraviolet Electroluminescence from In Doped n-ZnO Single-Nanowire/p~+-Si Heterostructures

The Underlying Micro-Mechanism of Performance Enhancement of Non-Polar N-Zno/p-algan Ultraviolet Light Emitting Diode with I-Zno Inserted Layer

Interfacially Al-doped ZnO Nanowires: Greatly Enhanced Near Band Edge Emission Through Suppressed Electron-Phonon Coupling and Confined Optical Field.

Electroluminescent And Transport Mechanisms Of N-Zno/P-Si Heterojunctions

Near UV LEDs Made with in Situ Doped P-N Homojunction ZnO Nanowire Arrays

Hybrid quadrupole plasmon induced spectrally pure ultraviolet emission from a single AgNPs@ZnO:Ga microwire based heterojunction diode