Abstract:Quaternary chalcogenide Cu 2 CoSnS 4 (CCTS) thin films were successfully prepared by spray pyrolysis on glass substrates in varying the precursor concentration and the thiourea volume. The effects of the precursor concentration and the thiourea volume on the formation of the CCTS phase were systematically investigated by X-ray diffraction, Raman spectroscopy, Energy-Dispersive X-ray Spectroscopy. The electrical resistivity at room temperature has been measured by the four probes method. It is shown that the crystallization of the stannite CCTS phase depends on both the precursor concentration and thiourea volume. The minimum volume of thiourea required to crystallize the CCTS phase depends on the precursor concentration, i.e. the CCTS crystallization needs higher volume of thiourea at low precursor concentration. For higher precursor concentration, the CCTS is poorly crystallized with the presence of secondary phases such as CuS 2 , CoS 2 , and CuCo 2 S 4 , while the crystallization domain is relatively large. The CCTS well crystallizes only in a narrow range of precursor concentration and thiourea volume. The relatively poor crystallization combined with the presence of secondary phases are harmful for the optical and electrical features of the CCTS film. Besides, optical transmission measurements of the optimized film showed an optical gap of 1.7 eV (~ 730 nm) and an absorption coefficient included between 10 4 and 10 5 cm −1 in the visible solar range. Furthermore, the optimized stannite CCTS films are compact exhibiting a relatively rough and granular surface due to the formation of copper sulfide nodules. The electrical resistivity of the optimized CCTS film is about 0.4 10 –2 Ω cm. These results suggest that the deposited films fit the requirements of absorbing layer in solar cells. The diode composed of Au/Cu 2 CoSnS 4 /SnO 2 films was investigated with current–voltage ( I – V ) measurements performed under dark and bright conditions. The series resistance, saturation current and ideality factor of typical diode is estimated to be 689 Ω, 1.15 10 –5 A and 3, respectively.

The Effect of Substrate Temperature, Cu/Sn Ratio and Post-Annealing on the Phase-Change and Properties of Cu2SnS3 Film Deposited by Ultrasonic Spray Pyrolysis

The Properties of the Earth Abundant Cu2SnS3 Thin Film Prepared by Spray Pyrolysis and Rapid Thermal Annealing Route

[Study of the Physical Properties of SnS Thin Films Deposited by Ultrasonic Spray Pyrolysis Method].

The photovoltaic properties of novel narrow band gap Cu2SnS3 films prepared by a spray pyrolysis method

Phase composition of the earth-abundant Cu2SnS3 thin films with different annealing temperature and its effects on the performance of the related solar cells

Effect of the stacking order, annealing temperature and atmosphere on crystal phase and optical properties of Cu2SnS3

Sulfurization Temperature Dependent Physical Properties of Cu2SnS3 Films Grown by a Two-Stage Process

Effect of Heat Treatment on the Property of Cuins2 Thin Film Prepared by Chemical Bath Deposition

Synthesis of Cu2CoSnS4 chalcogenide thin films by spray pyrolysis and efficient Au/p-CCTS/n-SnO2 diode for cells solar applications

EFFECT OF ANNEALING ON THE CuInS2 THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION

Investigation of the Sulfurization Process of Cu2sns3 Thin Films with Stacked Layers Cbd-Cu/Sns by Rapid Thermal Process

Fabrication of Cu 2 SnS 3 thin-film solar cells with oxide precursor by pulsed laser deposition

Physical Properties of Cu2SnS3 Thin Films Prepared by Sulfurization of Co-Sputtered Cu-Sn Metallic Precursors

Synthesis, Growth and Characterization of Cu2CoSnS4 Thin Films via Thermal Evaporation Method

Band Positions and Photoelectrochemical Properties of Cu2znsns4 Thin Films by the Ultrasonic Spray Pyrolysis Method

Low cost oxide-based deposition of Cu2FeSnS4 thin films for photovoltaic absorbers

Preparation and Characterization of Cu2SnS3 Thin Films by Two Stage Process for Solar Cell Application

ChemInform Abstract: the Photovoltaic Properties of Novel Narrow Band Gap Cu2SnS3 Films Prepared by a Spray Pyrolysis Method.

Substrate and Cu concentration-dependent physical properties of spray-deposited Cu2ZnSnS4 thin films: a comparative study

Optical and Electrical Investigations on Cu2SnS3 Layers Prepared by Two-Stage Process

Sulfurization Effect on Optical Properties of Cu2SNS3 Thin Films Grown by Two-Stage Process