Terahertz Detector for Imaging in 180-Nm Standard CMOS Process.

Zhaoyang Liu,Liyuan Liu,Zhao Zhang,Jian Liu,Nanjian Wu
DOI: https://doi.org/10.1007/s11432-015-0976-9
2017-01-01
Science China Information Sciences
Abstract:A CMOS terahertz (THz) detector implemented in a 180-nm standard CMOS process is proposed, and room-temperature detection of 0.94-THz radiation is demonstrated. The detector consists of an integrated on-chip patch antenna and a source-feeding NMOS transistor as the rectifying element. To improve the power transfer efficiency between the patch antenna and NMOS transistor, a novel short-stub matching network is proposed. An open quarter-wavelength microstrip transmission line connecting gate is proposed to eliminate the influence of the bonding wire and pad on the antenna-transistor impedance matching. Illuminated by a 0.94-THz BWO source, the measured voltage responsivity (R v) and noise equivalent power (NEP) of the detector are 31 V/W and 1.1 nW/Hz1/2, respectively.
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