Abstract:Intermediate band solar cells (IBSCs) have been predicted to be significantly more efficient than the conventional solar cells, but have not been realized to their full potential due to the difficulties related to the fabrication of practical devices. The authors report here on growth and characterization of Zn(Cd)Te/ZnCdSe submonolayer quantum dot (QD) superlattices (SLs), grown by migration enhanced epitaxy. These QDs do not exhibit formation of wetting layers, which is one of the culprits for the unsatisfactory performance of IBSCs. The ZnCdSe host bandgap is ∼2.1 eV when lattice matched to InP, while the Zn(Cd)Te-ZnCdSe valence band offset is ∼0.8 eV. These parameters make this material system an excellent candidate for a practical IBSC. The detailed structural analysis demonstrates that the process of desorption of Cd and the preferential incorporation of Zn facilitates the formation of unintentional strained ZnSe-rich layer at the QD-spacer interface. The growth conditions have been then optimized so as to obtain high crystalline quality lattice matched SL, by growing intentionally Cd-rich spacers, which strain balanced the SL. The excitation intensity dependent photoluminescence confirmed the type-II nature of these multilayer QD structures, which is expected to suppress nonradiative Auger recombination, and improve the carrier extraction process when implemented in an actual device.

Distinct enhancement of sub-bandgap photoresponse through intermediate band in high dose implanted ZnTe:O alloys

Effect of Oxygen Implantation on Microstructural and Optical Properties of Znte:O Intermediate-Band Photovoltaic Materials

Formation of intermediate band in ZnTe: O highly mismatched alloy synthesized by ion implantation

Highly Efficient Silicon Heterojunction Solar Cells with ZnO:Al Transparent Electrode and Transition Metal Doped Indium Oxide Interfacial Layer

Extreme Absorption Enhancement in ZnTe:O/ZnO Intermediate Band Core-Shell Nanowires by Interplay of Dielectric Resonance and Plasmonic Bowtie Nanoantennas

The Study of Electronic Structure and Absorption Coefficient of ZnTe:O Alloys: A GGA+U Method

Theoretical Optoelectronic Analysis of Intermediate-Band Photovoltaic Material Based on Zny1-Xox (Y = S, Se, Te) Semiconductors by First-Principles Calculations

Diluted II-VI Oxide Semiconductors with Multiple Band Gaps

Strategy for Performance Enhancement of Cd1-XZnXTe/CdS Core/shell Quantum Dot Sensitized Solar Cells Through Band Adjustment

Band Offsets of Zno/Pbte Heterostructure Determined by Synchrotron Radiation Photoelectron Spectroscopy

Facile in situ synthesis of dendrite-like ZnO/ZnTe core/shell nanorod heterostructures for sensitized solar cells

Optimization of growth conditions of type-II Zn(Cd)Te/ZnCdSe submonolayer quantum dot superlattices for intermediate band solar cells

A Lattice-mismatched PbTe/ZnTe Heterostructure with High-speed Mid-infrared Photoresponses.

Alloying induced disorder and localized excitonic states in ternary BexZn1−xO thin films

First-Principles GGA+U Study of Intermediate-Band Characters from Zn 1-X M X O（M=3d Transition-Metal）Alloys Suitable for High Efficiency Solar Cell

PHOTOELECTRIC STRUCTURE DESIGN OF HIGH EFFICIENCY AMORPHOUS SILICON GERMANIUM SOLAR CELL BASED ON LIGHT MANAGEMENT AND BAND GAP PROFILING

Interfacially Al-doped ZnO Nanowires: Greatly Enhanced Near Band Edge Emission Through Suppressed Electron-Phonon Coupling and Confined Optical Field.

Suppressed phase separation of mixed-halide perovskites confined in endotaxial matrices

Thermal Treatment Induced Change of Diluted Oxygen Doped ZnTe Films Grown by Metal-Organic Chemical Vapor Deposition

Rectified electrical transport and self-powered photoresponse in ZnTe/WS 2 heterostructures

Improved Internal Quantum Efficiency of Photoluminescence in Zinc Ion-Implanted ZnO Bulk Crystals