Abstract:This study investigates the impact of calcination temperature on Zinc Oxide (ZnO) films deposited on quartz substrates, focusing on their structural, optical, and electronic properties. X-ray diffraction (XRD) analysis reveals a shift in crystallographic orientation from the (002) to the (101) direction at higher temperatures, attributed to increased Zn-to-ZnO ion ratio and the presence of metallic impurities or interstitial zinc (Zn i ) defects. X-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy determine the ZnO/Si heterojunction band arrangement and band offset investigation which yields the values of ~ 2.49 eV for the valance band offset and ~ 0.33 eV for the conduction band offset. These studies are in great agreement with the available theoretical studies. Consequently, using the band offset values and energy levels, the band diagram of the ZnO /Si heterojunction has been presented, which is crucial for understanding charge transport in photovoltaic devices. Although there are few reports of this type of heterojunction solar cell, the presently fabricated ZnO/Si solar cell exhibits an efficiency ~ 5.5% with high open circuit voltage ~ 0.78 V, short circuit current density ~ 14.1 mA/cm 2 , and FF ~ 0.51. These findings underscore the importance of defect engineering and crystalline optimization in enhancing ZnO-based device performance for future optoelectronic applications.

Formation of intermediate band in ZnTe: O highly mismatched alloy synthesized by ion implantation

Effect of Oxygen Implantation on Microstructural and Optical Properties of Znte:O Intermediate-Band Photovoltaic Materials

Distinct enhancement of sub-bandgap photoresponse through intermediate band in high dose implanted ZnTe:O alloys

The Study of Electronic Structure and Absorption Coefficient of ZnTe:O Alloys: A GGA+U Method

Theoretical Optoelectronic Analysis of Intermediate-Band Photovoltaic Material Based on Zny1-Xox (Y = S, Se, Te) Semiconductors by First-Principles Calculations

Thermal Treatment Induced Change of Diluted Oxygen Doped ZnTe Films Grown by Metal-Organic Chemical Vapor Deposition

Structural, Optical and Half-Metallic Properties of Mn and As Co-Implanted ZnO Thin Films

Band Offsets of Zno/Pbte Heterostructure Determined by Synchrotron Radiation Photoelectron Spectroscopy

Interface band alignment engineering of ZnO/Si heterojunction solar cells with high open circuit voltage

Diluted II-VI Oxide Semiconductors with Multiple Band Gaps

Band Alignment and Interfacial Structure of ZnO/Si Heterojunction with Al2O3 and HfO2 As Interlayers

Band Alignment and Band Bending at Α-Ga2o3/zno N-N Isotype Hetero-Interface

First-Principles GGA+U Study of Intermediate-Band Characters from Zn 1-X M X O（M=3d Transition-Metal）Alloys Suitable for High Efficiency Solar Cell

Composition dependent band offsets of ZnO and its ternary alloys

Defects and Acceptor Centers in ZnO Introduced by C + -Implantation

Accelerated optimization of transparent, amorphous zinc-tin-oxide thin films for optoelectronic applications

Band alignment of Zn 0.778 Cd 0.222 O/MgO(001) heterointerface determined by X-ray photoelectron spectroscopy

Structural and Optical Properties of H Implanted ZnO

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga 2 O 3 ([Formula: see text]) Heterojunctions.

Investigation of Energy Band at Atomic-Layer-Deposited ZnO/β-Ga 2 O 3 ( 201 ) Heterojunctions

Investigation Of Energy Band At Atomic-Layer-Deposited Zno/Beta-Ga2o3 ((2)Over-Bar01) Heterojunctions