Abstract:New electronic devices with small size and low power consumption are in demand in recent years. Miniaturization and complex product are required in modern electronics for more functionality in the smaller electronic package. To overcome such issues, 3D packages or package on package (PoP) are introduced. The 3D packaging is stacking of chip on top of another which is emerging as a powerful technology that satisfies such integrated circuit (IC) package demands. A 3D package using through silicon vias (TSVs) has emerged as an effective technology for future interconnection requirements. The mismatch of coefficient of thermal expansion (CTE) of the SiO2 and copper used in TSV can induce a lot of thermal stresses. The stress developed at interfaces results in the interfacial delamination of TSV, which is mainly driven by a shear stress concentration at the point. The developed thermal stresses are critical for the thermo-mechanical reliability of the 3D package. In this paper, the effect of package structure on the failure metric of the 3D package has been studied. J-integral has been used to quantify the crack driving force. The crack is modeled at the TSV and BEOL (Back End of the Line) and the die-substrate thickness is varied and studied during chip attachment process and under thermal cycling load for optimizing the die and substrate thickness design [1]. Finite Element method have been used to analyze the thermo-mechanical stresses and fracture parameters in TSV structures 3D package. For this study, full field compact modeling methodology [2] has been leveraged for the ease of FEA using ANSYS Workbench 17.2. An optimized package assembly was obtained to reduce the crack driving energy at the TSV region and in the BEOL dielectric layer. A design approach has been proposed to mitigate brittle failure issues thus improving the thermo-mechanical reliability of the 3D package.

Evaluation and Optimization of Thermo-Mechanical Reliability of a TSV-Based 3D MEMS

Processes-based Multistep Simulation of Thermal- mechanical Reliability of a 3D-TSV MEMS

Thermal-mechanical Reliability Assessment of TSV Structure for 3D IC Integration

Thermal-mechanical Reliability Analysis of Connection Structure Between Redistribution Layer and TSV for MEMS Packaging

Fem Simulation of the Thermo-Mechanical Behavior of Tsv 3d Mems Structure

Computational Analysis of Mechanical and Electromigration Reliability Problems

Simulation and Experimental Analysis of Thermomechanical Stress Around Interconnects for W2W Hybrid Bonding

Simulation and Evaluation of Thermal Mechanical Reliability of 3D-Tsv Stack with Viscoelastic Underfill

Mechanical and Electrical Reliability Assessment of Bump-Less Wafer-on-wafer Integration with One-Time Bottom-Up TSV Filling

Simulation and Optimization of 3D Heterogeneous Integration of Inertial Micro-System

Reliability Simulation Analysis of TSV Structure in Silicon Interposer under Temperature Cycling

Thermal–Mechanical and Signal Reliability of a New Differentiated TSV

Structural integrity optimization of 3D TSV package by analyzing crack behavior at TSV and BEOL

Reliable Design of Electroplated Copper Through Silicon Vias

Comprehensive study of the impact of TSV induced thermo-mechanical stress on 3D IC device performance

Partially Filled TGV Based on Double Sides Cu Conformal Electroplating Process for MEMS Vacuum Packaging

Influence of Viscoelastic Underfill on Thermal Mechanical Reliability of a 3-D-TSV Stack by Simulation

Thermal Stresses of Tsvs with Silicon Post Conductors and Polymer Insulators

Evaluation of Thermal Mechanical Reliability of Three Dimensional Packaging System with Redundant Tsvs

Modeling and Simulation of Cu Tsv Electroplating for Wafer-Level Mems Vacuum Packaging