Silicon Dioxide Thin Films Deposited Using Oxide Targets: Results of Atomistic Simulation

F. V. Grigoriev,V. B. Sulimov,A. V. Tikhonravov

DOI: https://doi.org/10.3390/coatings14030258

IF: 3.236

2024-02-22

Coatings

Abstract:An atomistic simulation of silicon dioxide thin films deposited using oxide targets is performed. The influence of the oxide target on the deposition process is taken into account by introducing O=Si=O molecules into the flow of particles moving from the target to the substrate. The fraction of these molecules varied from 0 to 50%. It was found that the presence of O=Si=O molecules leads to film densification during a normal deposition. With a low-energy deposition, the increase in density was twice as high as with a high-energy deposition. The absolute value of the compressive stress increased with an increasing fraction of O=Si=O molecules in the flow of deposited particles at a normal, high-energy deposition. The influence of O=Si=O molecules on the structure of the glancing angle deposited films depends on the deposition angle.

materials science, multidisciplinary,physics, applied, coatings & films