Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si

Continuous-wave, Room Temperature, Low Voltage Green–blue Diode Laser

Room temperature continuous wave operation of a heterojunction bipolar transistor laser

Room-temperature Continuous-Wave Electrically Pumped InGaN/GaN Quantum Well Blue Laser Diode Directly Grown on Si

Room-temperature Electrically Pumped InGaN-based Microdisk Laser Grown on Si

Room-Temperature Electrically Injected AlGaN-Based Near-Ultraviolet Laser Grown on Si

Continuous-wave Electrically Injected GaN-on-Si Microdisk Laser Diodes

480 nm InGaN-based cyan laser diode grown on Si by interface engineering of active region

Continuous-Wave Current Injected InGaN/GaN Microdisk Laser on Si(100)

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

Tunable Quantum Dot Lasers Grown Directly on Silicon

Low-threshold Green Lasing in Heterogeneously Integrated InGaN-based Micro-rings Covered by Distributed Bragg Reflectors on Si (100)

Material Growth and Device Fabrication of GaN-Based Blue-Violet Laser Diodes

High-power, electrically-driven continuous-wave 1.55-μm Si-based multi-quantum well lasers with a wide operating temperature range grown on wafer-scale InP-on-Si (100) heterogeneous substrate

Continuous-Wave Emission Of Iii-V Quantum Dot Lasers Grown Directly On Si Substrates

Electrically Pumped Continuous‐wave 1.3‐µm InAs/GaAs Quantum Dot Lasers Monolithically Grown on Si Substrates

InGaN-Based Lasers with an Inverted Ridge Waveguide Heterogeneously Integrated on Si(100)

On-wafer fabrication of cavity mirrors for InGaN-based laser diode grown on Si

Electrically Injected GaN-on-Si Blue Microdisk Laser Diodes

Electrically-Pumped Continuous-Wave Quantum-Dot Distributed Feedback Laser Array on Silicon

Room Temperature Continuous Wave Lasing of GaN-based Green Vertical-Cavity Surface-Emitting Lasers