Abstract:Tunable semiconductor lasers are often listed in critical technology road maps for future dense-wavelength-division-multiplexing (DWDM) systems and high-performance computing systems, and they are increasingly demanded in long-haul, metropolitan, and access networks. The capability to produce such lasers directly on silicon (Si) could boost the use of Si photonics and facilitate the adoption of optical data transmission even at the chip scale. Moreover, just the use of Si as a cheap and large-diameter substrate for device production is very advantageous, as the fabrication can take advantage of the highly optimized processing techniques and economy of scale enabled by decades of development in Si microelectronics. Here, we report a tunable single-wavelength quantum dot (QD) laser directly grown on Si. The high carrier confinement and a real dot density of QDs provide reduced sensitivity to crystalline defects, which allows for exceptional lasing performance even in lattice-mismatched material systems. The discrete density of states of dots yields unique gain properties that show promise for improved device performance and new functionalities relative to the quantum well counterparts, including high temperature stability, low threshold operation, reduced sidewall recombination, and isolator-free stability. We implement a simple, integrable architecture to achieve over 45 dB side-mode-suppression-ratio without involving regrowth steps or subwavelength grating lithography. Under continuous-wave electrical injection at room temperature, we achieved a 16 nm tuning range with output powers of over 2.7 mW per tuning wavelength. This work represents a step towards using III–V/Si epitaxy to form efficient, easily manufacturable on-chip Si light sources for not only DWDM networks, but also spectroscopy, biosensors, and many other emerging applications.

Continuous-Wave Emission Of Iii-V Quantum Dot Lasers Grown Directly On Si Substrates

Tunable Quantum Dot Lasers Grown Directly on Silicon

1.9 μm hybrid silicon/iii-v semiconductor laser

Continuous-wave quantum dot photonic crystal lasers grown on on-axis Si (001)

1.3 μm InAs/GaAs quantum-dot lasers grown on planar on-axis Si (001) substrates with high slope-efficiency and low differential resistance

GaAs/AlGaAs quantum cascade lasers

Monolithically Integrated Electrically Pumped Continuous-Wave III-V Quantum Dot Light Sources on Silicon

E-Band InAs Quantum Dot Micro-Disk Laser with Metamorphic InGaAs Layers Grown on GaAs/Si (001) Substrate

InAsP/InGaAsP quantum-well 1.3 [micro sign]m vertical-cavity surface-emitting lasers

Room Temperature Continuous-Wave Operation of Inas/Inp (100) Quantum Dot Lasers Grown by Gas-Source Molecular-Beam Epitaxy

Reliable InAs quantum dot lasers grown on patterned Si (001) substrate with embedded hollow structures assisted thermal stress relaxation

Inas/Ingaasp/Inp Quantum Dot Lasers Grown by Metalorganic Chemical Vapor Deposition

Quantum Dot Lasers: Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm (laser Photonics Rev. 14(3)/2020)

Optically Pumped Mid-Infrared Light Emitter on Silicon

Monolithic integration of embedded III-V lasers on SOI

InGaAs/GaAs nano-ridge laser with an amorphous silicon grating monolithically grown on a 300 mm Si wafer

Directly Modulated Single‐Mode Tunable Quantum Dot Lasers at 1.3 Μm

Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers

Monolithic Quantum Dot Discrete Mode Laser on SOI

InAs/GaAs Quantum Dot Microlasers Formed on Silicon Using Monolithic and Hybrid Integration Methods

Low-threshold single ternary GaAsSb nanowire lasers emitting at silicon transparent wavelengths