Abstract:CdO-Ga 2 O 3 alloy films (Cd 1-x Ga x O 1+δ ) over the whole composition range (x=0 to 1) were synthesized by room temperature radio frequency magnetron sputtering. We found that the intrinsic band gap of these alloys can be tuned in a wide range from 2.2 to 4.8 eV. As the Ga content increases to x>0.3 the alloy becomes entirely amorphous and the resistivity increases from 10 -3 to 10 -1 ohm-cm while the mobility decreases gradually from 15 (x=0.34) to 10 cm 2 /Vs (x=0.6). The resistivity of amorphous Cd 1-x Ga x O 1+δ films can be further controlled from 10 -3 to 10 2 ohm-cm by oxygen doping. Moreover, alloy films grown on plastic (PEN) substrate exhibit similar electrical and optical properties. These results suggest that amorphous Cd 1-x Ga x O 1+δ alloy films can potentially be used as highly conducting transparent conductors on flexible solar cells as well as gate electrodes with a wide bandgap tunabilty for transparent/flexible devices.

Bandgap widening and behavior of Raman-active phonon modes of cubic single-crystalline (In,Ga)$_2$O$_3$ alloy films

Transparent conducting amorphous CdO-Ga 2 O 3 films synthesized by room temperature sputtering

Transparent conducting amorphous CdO-Ga<inf>2</inf>O<inf>3</inf> films synthesized by room temperature sputtering

The electrical conductivity of cubic (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x\le0.18$): Native point defects, Sn-doping, and the surface electron accumulation layer

Raman scattering measurements of phonon anharmonicity in the delafossite CuGa<sub>1-<i>x</i></sub>Cr<sub><i>x</i></sub>O<sub>2</sub> (0 <i>x</i> 1) films

Dependence on Al Concentration of the Optical Phonons of AlxGa1−xN Films

Assessment of Optical and Phonon Characteristics in MOCVD-Grown (AlxGa1-x)0.5In0.5P/n+-GaAs Epifilms

Isotopic study of Raman active phonon modes in $β$-Ga$_{2}$O$_{3}$

Molecular beam epitaxy of single-crystalline bixbyite (In$_{1-x}$Ga$_x$)$_2$O$_3$ films ($x \leq 0.18$): Structural properties and consequences of compositional inhomogeneity

Identification and modulation of electronic band structures of single-phase β-(Al<sub>x</sub>Ga<sub>1−x</sub>)<sub>2</sub>O<sub>3</sub> alloys grown by laser molecular beam epitaxy

Effective Band Structure and Crack Formation Analysis in Pseudomorphic Epitaxial Growth of (In x Ga 1- x ) 2 O 3 Alloys: A First-Principles Study

Compositional effects on structural, electronic, elastic, piezoelectric and dielectric properties of GaInN alloys: a first-principles study

Raman scattering study of In xGa 1-xN alloys with low indium compositions

Effects of indium composition x and temperature on the raman phonon properties of InxGa1-x N alloys with high Indium composition

Crystallization and bandgap variation of non-stoichiometric amorphous Ga2O3-x thin films during post-annealing process

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x

Phonon Modes And Raman-Scattering In Gaas/Ga1-Xalxas

Raman Scattering Study of In <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N Alloys with Low Indium Compositions

Bandgap narrowing and hole self-trapping reduction in Ga2O3 by Bi2O3 alloying

Electronic States of Gallium Oxide Epitaxial Thin Films and Related Atomic Arrangement

Infrared Spectrum of GaN1-xPx Ternary Alloy