Abstract:Carbon nanotube field effect transistor (CNFET), using the carbon nanotubes (CNTs) as the material for conducting, is a promising alternative of CMOS technology to overcome the "power wall" issue. Recently, a microprocessor solely based on CNFETs was fabricated and demonstrated, which is a big step forward to the industrial practice. However, CNFETs are inherently subject to much larger process variation or manufacturing defects; thereby it may cause significant design cost to build high performance processors. This is exacerbated in the large register file (RF) architectures widely used in single instruction multiple data (SIMD) architectures, e.g., general public utilities style processors, where the number of critical paths are multiplied by the SIMD width and thread count. In this paper, we seek cost-effective approaches to address the issues by judiciously exploiting the strong asymmetric spatial correlation in the variation unique to the CNFET fabrication process. This paper presents a microarchitectural model to characterize CNFET delay variation and malfunction, under which we show that the RF organizations coupled with the architectural schemes are critical to the performance and power consumption of the SIMD processor. Therefore, we propose several architectural techniques to mitigate the performance degradation and the impact of CNT metallization, leveraging the distinctive CNFET characteristics and the unique features in the SIMD processors. Experimental results verify the effectiveness of the proposed techniques and demonstrate the great opportunity offered by this new device technology.

On Microarchitectural Modeling for CNFET-based Circuits.

Circuit Modeling and Performance Analysis of Multi-Walled Carbon Nanotube Interconnects

Modeling of Carbon Nanotube Interconnects and Comparative Analysis with Cu Interconnects

Comparative study on the characteristics among few-walled carbon nanotube array field-effect transistors

Carbon Nanotube Materials for Future Integrated Circuit Applications

Modeling and performance characterization of double-walled carbon nanotube array field-effect transistors

Device and Circuit-Level Performance of Carbon Nanotube Field-Effect Transistor with Benchmarking Against A Nano-Mosfet

CNFET-Based High Throughput SIMD Architecture

Carbon nanotube circuits in the presence of carbon nanotube density variations

Artificial Neural Network Based CNTFETs Modeling

Carbon Nanotube Electronics - Materials, Devices, Circuits, Design, Modeling, and Performance Projection

A Compact Virtual-Source Model for Carbon Nanotube Field-Effect Transistors in the Sub-10-nm Regime - Part II Extrinsic Elements, Performance Assessment, and Design Optimization

Timing-driven Placement for Carbon Nanotube Circuits

An Analytical Model for Intrinsic Carbon Nanotube Fets

Carbon Nanotube Robust Digital VLSI

Modeling CNTFET Performance Variation Due to Spatial Distribution of Carbon Nanotubes

Progress on a Carbon Nanotube Field-Effect Transistor Integrated Circuit: State of the Art, Challenges, and Evolution

Variation-Aware Global Placement for Improving Timing-Yield of Carbon-Nanotube Field Effect Transistor Circuit.

A non-iterative compact model for carbon nanotube FETs incorporating source exhaustion effects

ALTRAS-CNFET: Full-band based quantum transport simulator for carbon nanotube field effect transistor engineering: From chirality to device performance

A Fully Anlytical Model for Carbon Nanotube FETs including Quantum Capacitances and Electrostatics