A Mechanical–Electrical Model to Describe the Negative Differential Resistance in Membranotronic Devices

Max Huber,Jörg Schuster,Oliver G. Schmidt,Harald Kuhn,Daniil Karnaushenko

DOI: https://doi.org/10.1002/pssr.202470010

2024-05-07

physica status solidi (RRL) - Rapid Research Letters

Abstract:physica status solidi (RRL) – Rapid Research Letters, Volume 18, Issue 5, May 2024.

physics, condensed matter, applied,materials science, multidisciplinary

What problem does this paper attempt to address?

Negative Differential Resistance in Polymer Molecular Devices Modulated with Molecular Length

Yun Ren,Ke-Qiu Chen,Qing Wan,Anlian Pan,W. P. Hu

DOI: https://doi.org/10.1016/j.physleta.2010.07.040

IF: 2.707

2010-01-01

Physics Letters A

Abstract:We study the electronic transport properties of polymer molecular devices by applying first-principles method. The results show that the electronic transport properties depend on molecular length. Negative differential resistance can be observed and can be modulated with molecular length.
Negative Differential Resistance in Carbon-Based Nanostructures

S.A. Evlashin,M.A. Tarkhov,D.A. Chernodubov,A.V. Inyushkin,A.A. Pilevsky,P.V. Dyakonov,A.A. Pavlov,N.V. Suetin,I.S. Akhatov,V. Perebeinos

DOI: https://doi.org/10.1103/PhysRevApplied.15.054057

2021-05-11

Abstract:Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor devices in the last more than half a century. Here, we report NDR behavior formation in randomly oriented graphene-like nanostructures up to 37 K and high on-current density up to 10^5 A/cm^2. Our modeling of the current-voltage characteristics, including the self-heating effects, suggests that strong temperature dependence of the low-bias resistance is responsible for the nonlinear electrical behavior. Our findings open opportunities for the practical realization of the on-demand NDR behavior in nanostructures of 2D and 3D material-based devices via heat management in the conducting films and the underlying substrates.

Mesoscale and Nanoscale Physics,Materials Science
Mechanism for Negative Differential Resistance in Molecular Electronic Devices: Local Orbital Symmetry Matching.

Lan Chen,Zhenpeng Hu,Aidi Zhao,Bing Wang,Yi Luo,Jinlong Yang,J. G. Hou

DOI: https://doi.org/10.1103/physrevlett.99.146803

IF: 8.6

2007-01-01

Physical Review Letters

Abstract:A new mechanism for negative differential resistance (NDR) originating from local orbital symmetry matching between an electrode and a molecule in a single molecular electronic device is proposed and demonstrated by a joint experimental and theoretical scanning tunneling microscope study of a cobalt phthalocyanines (CoPc) molecule on a gold substrate. For two different metal tips used, Ni and W, NDR occurs only with Ni tips and shows no dependence on the geometrical shape of the tip. Calculations reveal that such a behavior is a result of local orbital symmetry matching between the Ni tip and Co atom.
Perfect memristor: non-volatility, switching and negative differential resistance

Sergey E. Savel'ev,Fabio Marchesoni,Alexander M. Bratkovsky

DOI: https://doi.org/10.48550/arXiv.1304.4501

2013-04-16

Abstract:We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the presence of Joule's heat dissipation. In the case of a single potential minimum, we observe hysteresis of the resistance at finite applied currents and a negative differential resistance. For two (or more) minima the switching mechanism is non-volatile, meaning that the memristor can switch to a resistive state of choice and stay there. Moreover, the noise spectra of the switch exhibit $1/f^2\rightarrow 1/f$ crossover, in agreement with recent experimental results.

Mesoscale and Nanoscale Physics
Non linear transport theory for negative-differential resistance states of two dimensional electron systems in strong magnetic fields

A. Kunold,M. Torres

DOI: https://doi.org/10.1103/PhysRevB.80.205314

2009-07-03

Abstract:We present a model to describe the nonlinear response to a direct dc current applied to a two-dimensional electron system in a strong magnetic field. The model is based on the solution of the von Neumann equation incorporating the exact dynamics of two-dimensional damped electrons in the presence of arbitrarily strong magnetic and dc electric fields, while the effects of randomly distributed impurities are perturbatively added. From the analysis of the differential resistivity and the longitudinal voltage we observe the formation of negative differential resistivity states (NDRS) that are the precursors of the zero differential resistivity states (ZDRS). The theoretical predictions correctly reproduce the main experimental features provided that the inelastic scattering rate obey a $T^2$ temperature dependence, consistent with electron-electron interaction effects.

Mesoscale and Nanoscale Physics
Negative differential resistance in Josephson junctions coupled to a cavity

N.F. Pedersen,G. Filatrella,V. Pierro,M.P. Sorensen

2023-12-17

Abstract:Regions with negative differential resistance can arise in the IV curve of Josephson junctions and this phenomenon plays an essential role for applications, in particular for THz radiation emission. For the measurement of high frequency radiation from Josephson junctions, a cavity - either internal or external - is often used. A cavity may also induce a negative differential resistance region at the lower side of the resonance frequency. We investigate the dynamics of Josephson junctions with a negative differential resistance in the quasi particle tunnel current, i.e. in the McCumber curve. We find that very complicated and unexpected interactions take place. This may be useful for the interpretation of experimental measurements of THz radiation from intrinsic Josephson junctions.

Superconductivity
Memristive Devices and Systems: Modeling, Properties and Applications

Chun Sing Lai,Zhekang Dong,Donglian Qi

DOI: https://doi.org/10.3390/electronics12030765

IF: 2.9

2023-01-01

Electronics

Abstract:The memristor is considered to be a promising candidate for next-generation computing systems due to its nonvolatility, high density, low power, nanoscale geometry, nonlinearity, binary/multiple memory capacity, and negative differential resistance [...]
Negative Differential Resistance Induced by Intermolecular Interaction in a Bimolecular Device

Meng-Qiu Long,Ke-Qiu Chen,Lingling Wang,B. S. Zou,Z. Shuai

DOI: https://doi.org/10.1063/1.2822423

IF: 4

2007-01-01

Applied Physics Letters

Abstract:Using nonequilibrium Green’s functions in combination with the density-functional theory, we study the electronic transport properties of the molecular device constructed by two cofacial oligo(phenylene ethynylene) molecules and gold electrodes. The results show that negative differential resistance can be observed when the intermolecular distance closes to a certain value. We propose that a combination of the splitting of the molecular orbitals due to the intermolecular interaction and the change of the coupling between the molecules and the electrodes at different biases might be responsible for the negative differential resistance behavior.
Molecular Design of Negative Differential Resistance Device through Intermolecular Interaction

H. Geng,Y. Hu,Z. Shuai,K. Xia,H. Gao,K. Chen

DOI: https://doi.org/10.1021/jp077533f

2007-01-01

Abstract:By applying nonequilibrium Green's functions coupled with first-principles electronic structures, we investigate the transport properties of the molecule device with a donor-acceptor molecular complex sandwiched between two electrodes. The results show that the system manifests negative differential resistance (NDR) behavior. It is found that the orbital match of molecule and electrodes as well as intermolecular charge transfer are responsible for the NDR behavior.
Schottky barrier induced asymmetry in the negative differential resistance response of Nb/NbOx/Pt cross-point devices

Shimul Kanti Nath,Sanjoy Kumar Nandi,Assaad El-Helou,Xinjun Liu,Shuai Li,Thomas Ratcliff,Peter E Raad,Robert G Elliman

DOI: https://doi.org/10.1103/PhysRevApplied.13.064024

2019-12-18

Abstract:The negative differential resistance (NDR) response of Nb/NbOx/Pt cross-point devices is shown to have a polarity dependence due to the effect of the metal/oxide Schottky barriers on the contact resistance. Three distinct responses are observed under opposite polarity testing: bipolar S-type NDR, bipolar snap-back NDR, and combined S-type and snap-back NDR, depending on the stoichiometry of the oxide film and device area. In-situ thermoreflectance imaging is used to show that these NDR responses are associated with strong current localisation, thereby justifying the use of a previously developed two-zone, core shell thermal model of the device. The observed polarity dependent NDR responses, and their dependence on stoichiometry and area are then explained by extending this model to include the effect of the polarity dependent contact resistance. This study provides an improved understanding of the NDR response of metal/oxide/metal structures and informs the engineering of devices for neuromorphic computing and non-volatile memory applications.

Applied Physics
Origin of current-controlled negative differential resistance modes and the emergence of composite characteristics with high complexity

Shuai Li,Xinjun Liu,Sanjoy Kumar Nandi,Shimul Kanti Nath,Robert G. Elliman

DOI: https://doi.org/10.1002/adfm.201905060

2019-06-20

Abstract:Current-controlled negative differential resistance has significant potential as a fundamental building block in brain-inspired neuromorphic computing. However, achieving desired negative differential resistance characteristics, which is crucial for practical implementation, remains challenging due to little consensus on the underlying mechanism and unclear design criteria. Here, we report a material-independent model of current-controlled negative differential resistance to explain a broad range of characteristics, including the origin of the discontinuous snap-back response observed in many transition metal oxides. This is achieved by explicitly accounting for a non-uniform current distribution in the oxide film and its impact on the effective circuit of the device, rather than a material-specific phase transition. The predictions of the model are then compared with experimental observations to show that the continuous S-type and discontinuous snap-back characteristics serve as fundamental building blocks for composite behaviour with higher complexity. Finally, we demonstrate the potential of our approach for predicting and engineering unconventional compound behaviour with novel functionality for emerging electronic and neuromorphic computing applications.

Applied Physics,Emerging Technologies
Negative Differential Resistance in Multilayer MoTe2 FET

C.Z. Ning

DOI: https://doi.org/10.1109/oecc56963.2023.10209940

2023-01-01

Abstract:Recently, NDR and hysteresis in TMDCs devices have been reported for logic applications. Here, we demonstrated a NDR multilayer MoTe2 device with a high peak current density of 37 $\mathrm{m}\mathrm{A}/\mathrm{m}\mathrm{m}^{2}$ and a high PVR of 2. © 2023 The Author(s)
Negative Differential Resistances Observed in Suspended-Channel Fets

Haiyuan Gao,Huiquan Wang,Yang Xu,Zhonghe Jin

DOI: https://doi.org/10.1063/1.3666667

2011-01-01

Abstract:A new type of negative differential resistance (NDR) device based on the electro‐mechanical principle, named suspended‐channel FET (SC‐FET), is proposed. The FET channel is built up on a suspended nano‐bridge. When voltages are applied between the bridge and the substrate, the channel together with the bridge is pulled towards the substrate. The output and transfer characteristics of the SC‐FET are influenced by the vertical displacement and uniaxial strain near the channel. NDR is observed in the saturation region, which can be explained by an electromechanical coupling model.
Negative differential resistance in nanotube devices

F. Leonard,J. Tersoff

DOI: https://doi.org/10.1103/PhysRevLett.85.4767

2000-10-28

Abstract:Carbon nanotube junctions are predicted to exhibit negative differential resistance, with very high peak-to-valley current ratios even at room temperature. We treat both nanotube p-n junctions and undoped metal-nanotube-metal junctions, calculating quantum transport through the self-consistent potential within a tight-binding approximation. The undoped junctions in particular may be suitable for device integration.

Condensed Matter
S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides

Miao Wang,Chengyu Wang,Chenchen Wu,Qiao Li,Chen Pan,Cong Wang,Shi-Jun Liang,Feng Miao

DOI: https://doi.org/10.48550/arXiv.1901.07161

2019-01-22

Mesoscale and Nanoscale Physics

Abstract:Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental realization of S-type NDR based on conventional mechanisms poses demanding requirements on materials, which greatly limits their potential applications. Here, we experimentally identify that semiconducting transition metal dichalcogenides (TMDs) can host a bipolar S-type NDR devices. Theoretical simulations indicate that the origin of the NDR in these devices arises from a thermal feedback mechanism. Furthermore, we demonstrate the potential applications of TMDs based S-type NDR device in signal processing and neuromorphic electronics.
Numerical Simulation of Negative Differential Resistance Characteristics in Si/Si1- χGeχRTD at Room Temperature

Tao Li,Zhiping Yu,Yan Wang,Lei Huang

DOI: https://doi.org/10.1109/EDSSC.2005.1635293

2005-01-01

Abstract:Negative differential resistance (NDR) characteristics in the current-voltage curve of a p-type Si/Si1-χGeχresonant tunnelling diode (RTD) are simulated with the quantum hydrodynamic (QHD) model. An integrated difference scheme including Schafetter-Gummel (SG) method, second upwind method and second-order central difference method is used to discretize the QHD equations, which maintains both accuracy and stability. This work is the first to simulate hole transport in RTD using the QHD model. Investigations of some structure modifications have been carried out. Analysis of the results indicates that both quantum barrier thickness and hole effective mass have an impact on NDR characteristics for Si/Si1-χGeχRTD. The simulated peak-to-valley current ratio (PVCR) of 1.14 at T=293K agrees quantitatively with the experimental result when x=0.23.
Negative differential resistance based on phase transformation

Takashi Harumoto,Hiroyuki Fujiki,Ji Shi,Yoshio Nakamura,Yuji Sutou

DOI: https://doi.org/10.1039/d3mh00657c

2023-10-30

Abstract:The negative differential resistance (NDR) device is attracting attention because of its broad potential application in neuromorphic computing and non-volatile memory. However, only a limited range of materials show NDR and, therefore, there is less choice in material selection for NDR devices. Considering this issue, we here demonstrate a novel current controlled NDR device based on phase transformation. To the best of our knowledge, this report is the first experimental demonstration that NDR can be induced by phase transformation. We believe that the impact of this demonstration is very large, as phase transformation is the most common phenomenon in materials and consequently most materials can be reconsidered as possible candidates for NDR devices. The prototype NDR device is constructed using hydrogen absorbing metal palladium (Pd) thin-wire and the phase transformation from metal-hydride to metal is employed for the demonstration. The observed NDR property shows a strong dependence on the current sweep speed. Also, it exhibits no current polarity dependence. Therefore, the NDR device based on phase transformation is significantly different from typical NDR devices such as tunnel diodes and memristors. The prototype NDR device has been found to be very useful for evaluating the hydrogen storage properties of metals. The advantage of this analysis method is that the storage properties can be acquired just by sweeping the applied current. This demonstration offers novel directions for both the development and utilization of NDR devices.
Negative Differential-Resistance Device Involving Two C-60 Molecules

CG Zeng,HQ Wang,B Wang,JL Yang,JG Hou

DOI: https://doi.org/10.1063/1.1328773

IF: 4

2000-01-01

Applied Physics Letters

Abstract:Negative differential-resistance (NDR) molecular device is realized involving two C60 molecules, one is adsorbed on the tip of a scanning tunneling microscope and the other is on the surface of the hexanethiol self-assembled monolayer. The narrow local density of states features near the Fermi energy of the C60 molecules lead to the obvious NDR effect. Such controllable tunneling structure and the associated known electronic states ensure the stability and reproducibility of the NDR device.
Negative differential thermal conductance by photonic transport in electronic circuits

Shobhit Saheb Dey,Giuliano Timossi,Luigi Amico,Giampiero Marchegiani

DOI: https://doi.org/10.1103/PhysRevB.107.134510

2021-12-23

Abstract:The negative differential thermal conductance (NDTC) provides the key mechanism for realizing thermal transistors. This exotic effect has been the object of an extensive theoretical investigation, but the implementation is still limited to a few specific physical systems. Here, we consider a simple circuit of two electrodes exchanging heat through electromagnetic radiation. We demonstrate that the existence of an optimal condition for power transmission, well-known as impedance matching in electronics, provides a natural framework for engineering NDTC: the heat flux is reduced when the temperature increase is associated to an abrupt change of the electrode's impedance. As a case study, we analyze a hybrid structure based on thin-film technology, in which the increased resistance is due to a superconductor-resistive phase transition. For typical metallic superconductors operating below $1$K, NDTC reflects in a temperature drop of the order of a few mK by increasing the power supplied to the system. Our work draws new routes for implementing a thermal transistor in nanoscale circuits.

Mesoscale and Nanoscale Physics,Superconductivity
Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic

Jaewoo Shim,Seyong Oh,Dong-Ho Kang,Seo-Hyeon Jo,Muhammad Hasnain Ali,Woo-Young Choi,Keun Heo,Jaeho Jeon,Sungjoo Lee,Minwoo Kim,Young Jae Song,Jin-Hong Park

DOI: https://doi.org/10.1038/ncomms13413

IF: 16.6

2016-11-07

Nature Communications

Abstract:Recently, negative differential resistance devices have attracted considerable attention due to their folded current–voltage characteristic, which presents multiple threshold voltage values. Because of this remarkable property, studies associated with the negative differential resistance devices have been explored for realizing multi-valued logic applications. Here we demonstrate a negative differential resistance device based on a phosphorene/rhenium disulfide (BP/ReS2) heterojunction that is formed by type-III broken-gap band alignment, showing high peak-to-valley current ratio values of 4.2 and 6.9 at room temperature and 180 K, respectively. Also, the carrier transport mechanism of the BP/ReS2 negative differential resistance device is investigated in detail by analysing the tunnelling and diffusion currents at various temperatures with the proposed analytic negative differential resistance device model. Finally, we demonstrate a ternary inverter as a multi-valued logic application. This study of a two-dimensional material heterojunction is a step forward toward future multi-valued logic device research.

multidisciplinary sciences

A Mechanical–Electrical Model to Describe the Negative Differential Resistance in Membranotronic Devices

Negative Differential Resistance in Polymer Molecular Devices Modulated with Molecular Length

Negative Differential Resistance in Carbon-Based Nanostructures

Mechanism for Negative Differential Resistance in Molecular Electronic Devices: Local Orbital Symmetry Matching.

Perfect memristor: non-volatility, switching and negative differential resistance

Non linear transport theory for negative-differential resistance states of two dimensional electron systems in strong magnetic fields

Negative differential resistance in Josephson junctions coupled to a cavity

Memristive Devices and Systems: Modeling, Properties and Applications

Negative Differential Resistance Induced by Intermolecular Interaction in a Bimolecular Device

Molecular Design of Negative Differential Resistance Device through Intermolecular Interaction

Schottky barrier induced asymmetry in the negative differential resistance response of Nb/NbOx/Pt cross-point devices

Origin of current-controlled negative differential resistance modes and the emergence of composite characteristics with high complexity

Negative Differential Resistance in Multilayer MoTe2 FET

Negative Differential Resistances Observed in Suspended-Channel Fets

Negative differential resistance in nanotube devices

S-type Negative Differential Resistance in Semiconducting Transition-Metal Dichalcogenides

Numerical Simulation of Negative Differential Resistance Characteristics in Si/Si1- χGeχRTD at Room Temperature

Negative differential resistance based on phase transformation

Negative Differential-Resistance Device Involving Two C-60 Molecules

Negative differential thermal conductance by photonic transport in electronic circuits

Phosphorene/rhenium disulfide heterojunction-based negative differential resistance device for multi-valued logic