Non linear transport theory for negative-differential resistance states of two dimensional electron systems in strong magnetic fields

A. Kunold,M. Torres
DOI: https://doi.org/10.1103/PhysRevB.80.205314
2009-07-03
Abstract:We present a model to describe the nonlinear response to a direct dc current applied to a two-dimensional electron system in a strong magnetic field. The model is based on the solution of the von Neumann equation incorporating the exact dynamics of two-dimensional damped electrons in the presence of arbitrarily strong magnetic and dc electric fields, while the effects of randomly distributed impurities are perturbatively added. From the analysis of the differential resistivity and the longitudinal voltage we observe the formation of negative differential resistivity states (NDRS) that are the precursors of the zero differential resistivity states (ZDRS). The theoretical predictions correctly reproduce the main experimental features provided that the inelastic scattering rate obey a $T^2$ temperature dependence, consistent with electron-electron interaction effects.
Mesoscale and Nanoscale Physics
What problem does this paper attempt to address?
The problem that this paper attempts to solve is to explain the negative differential resistance state (NDRS) and the zero - differential resistance state (ZDRS) exhibited by the two - dimensional electron system (2DES) under the action of a direct - current electric field in a strong magnetic field. Specifically, the authors proposed a model to describe the nonlinear transport characteristics of the two - dimensional electron system under the action of a strong magnetic field and a direct - current electric field. By solving the von Neumann equation, combined with the influence of magnetic fields and direct - current electric fields of arbitrary intensities, and considering the perturbation effect of randomly distributed impurities at the same time, the authors analyzed the changes in differential resistance and longitudinal voltage and observed the formation of NDRS. These states are precursors to the zero - differential resistance state (ZDRS). ### Specific problem description 1. **Formation mechanism of the negative differential resistance state (NDRS)** - NDRS was observed in experiments under the conditions of low temperature (T ≤ 2K) and moderate bias current (0.4 A/m < Jx < 1.6 A/m). - The paper explained this phenomenon through a theoretical model, pointing out that under the condition of low direct - current bias (low electric field), the main mechanism is the non - equilibrium distribution function caused by inelastic scattering. 2. **Conditions for the zero - differential resistance state (ZDRS)** - When the temperature is low and exceeds a certain threshold bias current, the differential resistance will become negative and eventually evolve into the zero - differential resistance state. - Theoretically, this instability causes the system to quickly enter the ZDRS to ensure stability. 3. **Temperature dependence of the inelastic scattering rate** - In order to correctly reproduce the experimental results, the inelastic scattering rate must follow the temperature dependence of \( T^2 \), which is consistent with the electron - electron Coulomb interaction as the main inelastic process. - The formula is expressed as: \(\frac{1}{\tau_i} \approx \left( \frac{k_B T}{\hbar E_F} \right)^2\), where \(E_F\) is the Fermi energy. ### Conclusion The model proposed by the authors successfully explained the NDRS and ZDRS phenomena observed in the experiments, and pointed out that the \( T^2 \) temperature dependence of the inelastic scattering rate is a key factor. In addition, the model also revealed that under the condition of high bias current (high electric field), the enhancement of impurity scattering causes the differential resistance and longitudinal voltage to return to positive values.