Abstract:As a new type of detector material, the CdZnTe (CZT) crystal has the advantages such as a wide energy gap, a large average atomic number, the strong ability to stop X- ray and high resistivity. The CZT is not only the best epitaxial substrate to the growth process of infrared detector material—HgCdTe, but also can be widely used in the detector production of X-ray fluorescence analysis, nuclear waste monitoring, airport and port security testing, industrial detection, medical diagnosis, astrophysics research, etc. So it has very broad prospects. Compared with the traditional NaI detector, the CZT detector has a better energy resolution. Compared with Si and Ge detector, it can work at room temperature. So it absorbed great attention in recent years. The structure of the interface between the metal electrode and CZT has great effect on the performance of detector. Au electrode film was prepared on high resistance CZT single crystal by using vacuum evaporation technology in this research. The interface of Au/CZT was investigated by high resolution transmission electron microscope (HRTEM). The results showed that there existed a disordered layer with the thickness of 5-10nm in the interface between the Au electrode and CZT wafer which was only mechanical polished (as opposed to polished and etched) in our present experimental condition. That could be approved as an amorphous layer through diffraction pattern. On the other hand, the interface was flat, smooth and no amorphous layer on which CZT wafer was polished and etched.

The microstructure, optical and electrical property of CdZnTe thick films grown from a CSS method

CdZnTe thick films deposited by close-spaced sublimation and its properties

Studies of Structure,Composition and Photoelectric Properties of CdTe Thin Film Grown by Vacuum Sublimation

Microstructure, electrical and optical properties of Cd-doped CdTe thin films deposited by close-spaced-sublimation

Growth and Properties of CdZnTe Films on Different Substrates

The Dependence of Zn Content on Thermal Treatments for Cd1−xZnxTe Thin Films Deposited by Close-Spaced Sublimation

Effects of CdCl_2 Thermal Annealing on CdZnTe Thin Films Deposited by Close-Spaced Sublimation

Effects of CdCl2 thermal annealing on CdZnTe thin films deposited by close-spaced sublimation

The Influence of Surface Processing on Properties of CdZnTe Films Prepared by Close-Spaced Sublimation

Structure and Electrical Properties of ZnTe: Cu Polycrystalline Thin Films

Effect of Film Thickness on the Structural and Physical Properties of Cdznte Thin Films

Study on the Microstructure of Au/CdZnTe Interface by HRTEM

Preparation and Properties of CdZnTe Thick Film on Doped ZnO Film Substrates

Fabrication of CdTe Polycrystalline Films and Their Properties

Microstructure and optical properties of CdTe thin films prepared by close spaced sublimation method at various growth temperatures

Effect of a Seed Layer on the Properties of CdZnTe Thick Films Prepared by Close-Spaced Sublimation Method

Structural, Electrical and Sensing properties of Cd-doped ZnTe thin films, prepared by thermal evaporation method

[Study on ZnTe (znte:Cu) Polycrystalline Films by XPS].

Structure and Surface Morphology of Nano-Crystalline CdZnTe Films by Vacuum Deposition Method

Properties of ZnTe Films Deposited with Different Substrate Temperature Using CSS Method

Structure and optical properties of polycrystalline Cd 1−x Zn x Te thin films prepared by simultaneous evaporation