Air-stable ambipolar field-effect transistor based on a solution-processed octanaphthoxy-substituted tris(phthalocyaninato) europium semiconductor with high and balanced carrier mobilities

xia kong,xia zhang,dameng gao,dongdong qi,yanli chen,jianzhuang jiang
DOI: https://doi.org/10.1039/c4sc03492a
IF: 8.4
2015-01-01
Chemical Science
Abstract:Simple solvent vapor annealing over QLS film-based OFET devices fabricated from (Pc)Eu[Pc(ONh)(8)]Eu[Pc(ONh)(8)] led to a high and balanced ambipolar performance that has never been observed for small molecule single-component-based solution processed devices, with mobilities of 1.71 and 1.25 cm(2) V-1 s(-1) for holes and electrons, respectively, under ambient conditions.
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