Abstract:Ga-doped ZnO nanowire has a wurtzite hexagonal structure and has been prepared in a horizontal tube furnace by thermal chemical vapor deposition method. In this work, we fabricate the Ga-doped ZnO nanowires without a metalized catalyst through the thermal evaporation of the Zn powers and Ga degrees C.Temperature is the metals at a low growth temperature of 550 d critical experimental parameter for the formation of Ga-dope the ZnO nanowires.This evaporation process can be attributed to Ga dopant In the lattice position of he ZnO nanowires. As shown In scanning electron microscopy (SEM), nanowires of different diameters are evenly arranged on the Si substrate and nucleated via a self-catalysed mechanism by depositing a layer of ZnO film as the crystallization plant before growing ZnO nanowires on the film. Self-catalyzed growth of Ga-doped ZnO nanowires are of diameters 35-150nm and lengths up to several ones of micrometers. High resolution Transmission electron microscope (HRTEM) those lattice image of Ga doped ZnO nanowires, wherein nanowires are seen a lattice of a=3.25 angstrom and c=5.19 angstrom. As determine by selected area diffraction (SAD), the growth direction of Ga-doped ZnO nanowires is [001] and the nanowire consists of single-crystailline ZnO crystals.The luminescence spectra of the Ga-doped ZnO nanowires exhibit a UV band at 374nm and a strong green band at 498nm. In addition, the Ga-doped ZnO nano,wires with different diameters have a larger green light/UV ratio due to the recombination of holes with the electrons occupying the singly ionized more O vacancies that are larger In number. By virue of the doping of Ga, we observe that Ga-doped ZnO nanowires becomes broader and shifts to a longer wave 498nm at a lower energy and a strong green emission as compared to the undoped one in the cathodoluminescence and photoluminescence spectra. The Ga-doped ZnO nanowires; have a greater field-enhancement factor than the undoped ZnO nanowies. The Ga-doped ZnO nanowires with a low turn on field (12V mu m(-1)) are apparently lower than the undoped ZnO nanowires. Our results demonstrate that Ga-doped ZnO nanowires can provide the possibility of application In optoelectric nanodevices.

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Surface Morphology and Optical Properties of Na-doped ZnO Thin Films

Preparation and Characterization of Na-doped ZnO Thin Films by Sol–gel Method

Effect of Na Concentrations on Microstructure and Optical Properties of Zno Films

Optical Properties of Na-Doped Zno Nanorods Grown by Metalorganic Chemical Vapor Deposition

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Study on structural and optical properties of Sn-doped ZnO nanoarrays

Effect of Na Doping Content on the Structural and Electrical Properties of ZnO∶Nax Films

Photoluminescence and Resonant Raman Scattering in N-doped ZnO Thin Films

Na Doping Concentration Tuned Conductivity of ZnO Films Via Pulsed Laser Deposition and Electroluminescence from ZnO Homojunction on Silicon Substrate

Realization of P-Type Non-Polar A-Plane Zno Films Via Doping of Na Acceptor

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Realization of Na-doped P-Type Non-Polar A-Plane Zn1−xCdxO Films by Pulsed Laser Deposition

Characterization of Ga-doped ZnO Nanowires Grown by Thermal Chemical Vapor Deposition