Abstract:Highlights • Meter-scale Cu foils with decimeter grains are prepared by thermally annealing the rolled-up Cu foils. • The utilization efficiency of the reaction chamber is significantly improved. • High-quality graphene films grown on such large grain Cu foils are demonstrated. Chemical vapor deposition (CVD) is the most promising method for the preparation of high-quality and large-area graphene films, especially the epitaxial growth of graphene on large-area single-crystal Cu foils. While single-crystal Cu foils are normally achieved by thermally annealing the commercial polycrystalline Cu foils, their size and therefore the size of graphene films grown on them are limited to the size of the reaction chamber. We report a simple and feasible method to prepare large-area Cu foils with decimeter grains by thermally annealing the rolled-up Cu foils, where the Cu layers are separated by thin porous carbon fiber cloths. The carbon fiber cloths prevent Cu layers from sticking to each other at high temperatures while do not block the gas transportation. In such a way, the utilization efficiency of the reaction chamber is significantly improved, e.g. , 0.2 m × (1–2) m Cu foils can be processed even in a 5-cm diameter quartz tube chamber. High-quality graphene films grown on such Cu foils are then demonstrated. This method may be suitable for the annealing of other metal foils to enlarge grain size and the synthesis of other two-dimensional materials on them such as h-BN. Graphical abstract Download : Download high-res image (343KB) Download : Download full-size image

Graphene Film Growth on Cu Foil Via Direct Carbon Atoms Deposition by Using SSMBE

Ultrafast epitaxial growth of metre-sized single-crystal graphene on industrial Cu foil

Preparation of meter-scale Cu foils with decimeter grains and the use for the synthesis of graphene films

Molecular Beam Epitaxy Of Highly Crystalline Monolayer Molybdenum Disulfide On Hexagonal Boron Nitride

Graphene Films Grown on Sapphire Substrates Via Solid Source Molecular Beam Epitaxy

Graphene on silicon dioxide via carbon ion implantation in copper with PMMA-free transfer

Ultrafast Transition of Nonuniform Graphene to High-Quality Uniform Monolayer Films on Liquid Cu

Graphene Grown on Sapphire Surface by Using SiC Buffer Layer with SSMBE

Heteroepitaxial Growth Of Wafer Scale Highly Oriented Graphene Using Inductively Coupled Plasma Chemical Vapor Deposition

Rapid Growth Of Large-Area Single-Crystal Graphene Film By Seamless Stitching Using Resolidified Copper Foil On A Molybdenum Substrate

A Growth Mechanism for Graphene Deposited on Polycrystalline Co Film by Plasma Enhanced Chemical Vapor Deposition

Chemical Vapor Deposition of Graphene on Thin-Metal Films

Fast Batch Production of High-Quality Graphene Films in a Sealed Thermal Molecular Movement System.

Growth Behaviors of Graphene on Cu Foil by APCVD Using Methane

Efficient Growth Of High-Quality Graphene Films On Cu Foils By Ambient Pressure Chemical Vapor Deposition

Structural Evolution and Growth Mechanism of Graphene Domains on Copper Foil by Ambient Pressure Chemical Vapor Deposition

Molecular dynamics simulation of graphene sinking during chemical vapor deposition growth on semi-molten Cu substrate

Growth and Atomic-Scale Characterizations of Graphene on Multifaceted Textured Pt Foils Prepared by Chemical Vapor Deposition

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

Oxide-assisted Growth of Scalable Single-Crystalline Graphene with Seamlessly Stitched Millimeter-Sized Domains on Commercial Copper Foils.

The Atomic-scale Growth of Large-Area Monolayer Graphene on Single-Crystal Copper Substrates