Abstract:Researches of irradiation effects on silicon possess not only fundamental interests but also potential application prospects. Comparison studies about structural modification of silicon materials with different structures under identical irradiation conditions can reveal the irradiation mechanisms for amorphous and crystalline phases of silicon. For this purpose, amorphous silicon (a-Si) and nano-crystalline silicon (nc-Si) films as well as mono-crystalline silicon (c-Si) samples were irradiated with 6.0MeV Bi-ions at room temperature. The ion fluences are 1.0×1013, 5.0×1013 and 1.0×1014ions/cm2. All samples were analyzed by using a Raman spectrometer. The obtained results show that the crystalline fraction of c-Si and nc-Si decrease with increasing fluence, which indicates that the irradiation induces the amorphization of nc-Si and c-Si samples. In addition, the variation in Raman frequency of crystalline peak after irradiation reveals that the irradiation also results in the increased stress in crystalline phase of c-Si and nc-Si samples. As the fluence increases, the bond angle deviation and the ratio of TA to TO mode of amorphous network of a-Si and nc-Si films initially increase and then decrease by a diminishing degree, while the bond angle deviation and the ratio of TA to TO mode of amorphous network of c-Si samples increase continuously. This gives the dependence of short-range structural order of amorphous network of a-Si, nc-Si and c-Si samples on the ion fluence, which is related with the irradiation induced variation of local free energy. It is considered that the irradiation induced structural modification of silicon samples is mainly attributed to the nuclear energy loss. The irradiation effects of energetic heavy-ions on crystalline and amorphous phases of silicon have been discussed, respectively.

Micro-Raman spectroscopy characterization of silicon with different structures irradiated with energetic Bi-ions

Novel microstructures on the surfaces of single crystal silicon irradiated by intense pulsed ion beams

Modification of Optical Bandgap of Thin Silicon Films Induced by 94 MeV Xe Ion Irradiation

Irradiation Effects of 65mev Kr-ions on Structure and Optical Band-Gap of Nc-Si:H Films

Ion-irradiation effect on swelling and microstructure of BN particle dispersed liquid phase sintering SiC

Modification of Structure and Optical Band-Gap of Nc-Si:H Films with 30 and 196 MeV Kr-ions

Modification of Structure and Optical Band-Gap of Nc-Si:H Films with Ion Irradiation

Direct simulation of ion beam induced stressing and amorphization of silicon

Effect of Ion Irradiation on Nanoindentation Fracture and Deformation in Silicon Carbide

Effects of ion irradiation on chemical and mechanical properties of magnetron sputtered amorphous SiOC

Study of the Structural and Electrical Properties of Silicon Ion Irradiated Zirconium Nitride Thin Films

Irradiation Effects on Amosic-3 Silicon Carbide Composites by Si Ions Implantation

Irradiation effects in 6H–SiC induced by neutron and heavy ions: Raman spectroscopy and high-resolution XRD analysis

Cross-sectional Investigation of Radiation Damage of 2 MeV Proton-Irradiated Silicon Carbide

Mechanical Properties and Structure Evolution of Single-Crystalline Silicon Irradiated by 1 MeV Au+ and Cu+ Ions

Microstructure Evolution And Ft-Ir Spectra Of Silicon Induced By Pulsed Laser Irradiation

IRRADIATION OF ELECTRON WITH HIGH ENERGY INDUCED MICROCRYSTALLIZATION OF AMORPHOUS SILICON

Investigations on ion irradiation induced strain and structural modifications in 3C–SiC

Depth Profile Study on Raman Spectra of High-Energy-electron-irradiated Hydrogenated Amorphous Silicon Films

Effects of the Irradiation on Silicon by Femtosecond Laser of Various Energy Densities

Recrystallization effects in GeV Bi ion implanted 4H-SiC Schottky barrier diode investigated by cross-sectional Micro-Raman spectroscopy