Abstract:The homogeneous and crack free single-crystalline AlN thin films have been epitaxially grown on single-crystalline Cu (111) substrates with an in-plane alignment of AlN [11-20]//Cu [1-10] by pulsed laser deposition (PLD) technology with an integrated laser rastering program. The as-grown AlN films are studied by spectroscopic ellipsometry, field emission scanning electron microscopy (FESEM), atomic force microscopy (AFM), polarized light microscopy, high-resolution X-ray diffraction, and high-resolution transmission electron microscopy (HRTEM). The spectroscopic ellipsometry reveals the excellent thickness uniformity of as-grown AlN films on the Cu (111) substrates with a root-mean-square (RMS) thickness inhomogeneity less than 2.6%. AFM and FESEM measurements indicate that very smooth and flat surface AlN films are obtained with a surface RMS roughness of 2.3 nm. The X-ray reflectivity image illustrates that there is a maximum of 1.2 nm thick interfacial layer existing between the as-grown AlN and Cu (111) substrates and is confirmed by HRTEM measurement, and reciprocal space mapping shows that almost fully relaxed AlN films are achieved only with a compressive strain of 0.48% within similar to 321 nm thick films. This work demonstrates a possibility to obtain homogeneous and crack free single-crystalline AlN films on metallic substrates by PLD with optimized laser rastering program, and brings up a broad prospect for the application of acoustic filters that require abrupt hetero-interfaces between the AlN films and the metallic electrodes. (C) 2014 Elsevier B. V. All rights reserved.

Preparation of a Freestanding AlN Substrate from a Thick AlN Layer Grown by Hydride Vapor Phase Epitaxy on a Bulk AlN Substrate Prepared by Physical Vapor Transport

Preparation Of Aln Film Grown On Sputter-Deposited And Annealed Aln Buffer Layer Via Hvpe

Preparation of high-quality thick AlN layer on nanopatterned sapphire substrates with sputter-deposited annealed AlN film by hydride vapor-phase epitaxy

Surface Preparation and Homoepitaxial Deposition of AlN on (0001)-Oriented AlN Substrates by Metalorganic Chemical Vapor Deposition

Homoepitaxy Growth of High‐Quality AlN Film on MOCVD AlN Template by Hydride Vapor Phase Epitaxy

High-quality AlN growth: a detailed study on ammonia flow

Structural and Optical Properties of Carbon-Doped AlN Substrates Grown by Hydride Vapor Phase Epitaxy Using AlN Substrates Prepared by Physical Vapor Transport

Fabrication of Crack-Free Aln Film on Sapphire by Hydride Vapor Phase Epitaxy Using an in Situ Etching Method

Porous AlN Films Grown on C-face SiC by Hydride Vapor Phase Epitaxy

Evolution of the surface morphology of AlN epitaxial film by HVPE

AlN Thin Films Grown on Different Substrates by Metal Nitride Vapor Phase Epitaxy

Preparation of Aln Thin Films for Film Bulk Acoustic Resonator Application by Radio Frequency Sputtering

Epitaxy of (11–22) AlN Films on a Sputtered Buffer Layer with Different Annealing Temperatures via Hydride Vapour Phase Epitaxy

Influence of Thickness on Strain State and Surface Morphology of Aln Grown by Hvpe

Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates

Evolution of microstructure, stress and dislocation of AlN thick film on nanopatterned sapphire substrates by hydride vapor phase epitaxy

Epitaxial Growth of Homogeneous Single-Crystalline Aln Films on Single-Crystalline Cu (111) Substrates

AlN Thin Film Grown on Different Substrates by Hydride Vapor Phase Epitaxy

Four-inch High Quality Crack-Free AlN Layer Grown on a High-Temperature Annealed AlN Template by MOCVD

High-Quality AlN Grown by a Combination of Substrate Pretreatment and Periodic Growth Mode Control

Toward Φ56 mm Al-Polar AlN Single Crystals Grown by the Homoepitaxial PVT Method