Effect of BiFeO3 Doping on Ferroelectric Properties of Na0.5Bi0.5TiO3–BaTiO3 Based Thin Film Derived by Sol–gel Method

L. Q. Li,Y. Xiong,M. H. Tang,C. P. Cheng,J. Ouyang
DOI: https://doi.org/10.1007/s10971-014-3448-8
2014-01-01
Journal of Sol-Gel Science and Technology
Abstract:0.94Na0.5Bi0.5TiO3–0.06BaTiO3 (NBT–6BT) and (0.94 − x)Na0.5Bi0.5TiO3–0.06BaTiO3–xBiFeO3 (NBT–6BT–xBFO, x = 0.03, 0.05 and 0.08) thin films were deposited on Pt/Ti/SiO2/Si substrates by a sol–gel process. Relative permittivity and remnant polarization were maximized at 5 % BFO substitution. Compared with 0.94NBT–0.06BT, the leakage current density of 0.89NBT–0.06BT–0.05BFO at 600 kV/cm is reduced by one order of magnitude. Enhanced ferroelectricity was also achieved in 0.89NBT–0.06BT–0.05BFO, the remnant polarization (2P r) values of 0.89NBT–0.06BT–0.05BFO and 0.94NBT–0.06BT are 46 and 24 µC/cm2.
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