Effects of Annealing in N2 and Air after CdCl2 Treatment on the Properties of CdS Thin Films

y y zhu,run xu,z b fang

DOI: https://doi.org/10.4028/www.scientific.net/AMR.608-609.1363

2013-01-01

Abstract:The influence of annealing under different conditions on CdS films after CdCl2 post-growth treatments was investigated. The crystalline quality of CdS films was improved after the treatment with CdCl2 at 400 degrees C in N-2.

What problem does this paper attempt to address?

Study on the Annealing of Cd1-xZnxTe Alloys

魏彦锋,方维政,刘从峰,杨建荣,何力,王福建,王兴军,黄大鸣

DOI: https://doi.org/10.3321/j.issn:0253-4177.2001.08.008

2001-01-01

Abstract:The effect of Cd-annealing on Cd1-xZnxTe alloys was studied by using infrared transmission spectroscopy and micro Raman spectroscopy. It was shown that the IR transmittance is sensitive to the large size Te precipitates, while the Raman scattering can detect the small size Te precipitates. Via Cd-annealing, the large size Te precipitates can significantly be reduced under appropriate conditions, but it is quite difficult to eliminate the small size Te precipitates in the wafers.
Effect of CdCl2 Annealing Treatment on Thin CdS Films Prepared by Chemical Bath Deposition

Lei Wan,Zhizhong Bai,Zerong Hou,Deliang Wang,Hao Sun,Limin Xiong

DOI: https://doi.org/10.1016/j.tsf.2010.07.011

IF: 2.1

2010-01-01

Thin Solid Films

Abstract:In order to study the CdS recrystallization mechanism, a comparative study was carried out on thin films prepared by chemical bath deposition. The CdS films were annealed in air with or without a CdCl2 coating layer. In-situ Raman spectra obtained during the annealing showed that both the air- and the CdCl2-annealing did not cause rearrangement of the neighboring atoms in the CdS clusters below ~300°C. CdS thin film was partially oxidated to CdO and CdSO4 on the cluster surface when annealed in air. The oxides and the sulfur stoichiometric deficiency prevented the clusters to coalesce at higher temperatures. Coating thin CdS film with a thin CdCl2 layer protected it from oxidation during annealing in air and promoted formation of ClS and VCd point defects in CdS. The anti-oxidation was attributed to the incorporation of a significant amount of Cl into CdS to form the ClS, which prevented the oxygen in-diffusion and chemical bonding during the annealing. The anti-oxidation at the CdS nano-crystalline surface and the point defects formed in the CdS promoted coalescence of the neighboring clusters without the need of long-range redistribution of the atoms. Large CdS grains with good crystalline quality formed through recrystallization during the CdCl2 heat treatment, which provided the solid basis for the subsequent CdTe growth and high efficient CdS/CdTe solar cell fabrication.
EFFECT OF ANNEALING ON THE CuInS2 THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION

Huixiang Tang,Mi YAN,Hui Zhang,Deren Yang

DOI: https://doi.org/10.3321/j.issn:0254-0096.2005.03.013

2005-01-01

Abstract:The CuInS2 thin films for solar cells were prepared by two-step chemical bath deposition. The morphology, structure and composition of CuInS2 films have been characterized by XRD, SEM and EDX respectively. The effect of annealing on the formation of CuInS2 thin films was studied. The CuInS2 films annealed at high temperature for long time in anti-vacuum and N2 atmosphere was oxidized. The crystallization and the morphology of the CuInS2 thin films annealed at low and high temperature were improved in low vacuum degree, which is suitable for the annealing of the CuInS2 thin films prepared by chemical bath deposition.
Studies on the effects of annealing on the structural and optical properties of nanocrystalline ZnCdS thin films

S. Kumar,R. Bhushan,S. R. Kumar,S. Rajpal,,,,

DOI: https://doi.org/10.15251/cl.2022.191.1

2022-01-01

Chalcogenide Letters

Abstract:Zinc Cadmium Sulphide (ZnCdS) is a ternary direct band gap semiconducting material having potential applications in different opto-electronic devices. The deposition temperature can be effectively used to enhance the structure and optical properties of the films. In this paper, we have investigated the effect of air annealing on the various properties of ZnCdS films. A nanocrystalline ZnCdS thin film was successfully deposited on molybdenum substrate and the effect of annealing on structural, morphological, and optical properties were studied. The main impact was found to be slightly increase in crystallite size which effectively reduced the defects. It is observed that deposited film annealed at higher temperature provide a smooth and flat texture suited for optoelectronic applications. SEM photographs reveals the deposited grains are well connected and uniformly distributed over the surface. The experimental results show that the energy gap of the films is not much affected by the annealing temperature and varies from 2.6 eV to 2.7 eV. However, the oxygen annealing improves crystalline structure.

materials science, multidisciplinary,physics, applied
Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Zijian Yuan,Xiaming Zhu,Xiong Wang,Xikun Cai,Bingpo Zhang,Dongjiang Qiu,Huizhen Wu

DOI: https://doi.org/10.1016/j.tsf.2010.12.022

IF: 2.1

2011-01-01

Thin Solid Films

Abstract:Considering practical applications in electronic devices, we studied the growth of In2O3 thin films on amorphous glasses by magnetron sputtering at room temperature and annealing effect on the structural and electrical properties. The vacuum annealed In2O3 thin films display a grain size enlargement and preferential orientation. Electrical characterization shows that the vacuum annealed In2O3 thin films exhibit a significant enhancement of both electron density and mobility, while air ambient annealing leads to a remarkable drop. The mechanism of the electrical characteristic changes in In2O3 thin films by annealing is explored by using different scattering mechanisms. Finally, a thin film transistor device using vacuum annealed In2O3 nano-meter thin films as active channel material is demonstrated.
Effects of Post-Annealing Treatment on the Structural and Optical Properties of Cubic Mg Chi Zn1-Chi O Thin Films Grown on Sapphire

Chen Nai-Bo,Wu Hui-Zhen,Xu Tian-Ning,Yu Ping

IF: 1.292

2006-01-01

Journal of Inorganic Materials

Abstract:Single cubic-phase MgxZn1-xO(x >0.5) alloy films were synthesized on c-plane sapphire substrates by low temperature physical deposition. The effects of the post-annealing treatment on the structural properties of the films were investigated by the measurements of XRD and transmission spectra. Hexagonal-phase (wurtzite) MgZnO was observed segregating from the cubic-phase Mg0.53Zn0.47O film after annealing at 900 degrees C, while no secondary phase was seen in the samples with Mg fraction exceeding 0.55. Electrical measurement indicates that cubic-phase Mg0.55Zn0.45O films can be used in metal-insulator-silicon (MIS) structures as insulators with low leakage current densities. It could be concluded that the cubic-phase MgxZn1-xO films with x exceeding 0.55 are stable enough to be applied in fabricating high quality optoelectronic devices.
The effect of annealing temperature on the properties of CdSe thin films prepared by annealing the SES deposited precursors

Pengjie Wang,Rengang Zhang,Tuantuan Wang,Xuemei Li,Rui Cui,Hongyu Liu,Peng Zhang,Xingzhong Cao,Runsheng Yu,Baoyi Wang

DOI: https://doi.org/10.1016/j.optmat.2024.116284

IF: 3.754

2024-10-21

Optical Materials

Abstract:Cadmium selenide (CdSe) thin films were grown on quartz glass substrates by thermal annealing of thin-film precursors deposited by successive sputtering, evaporation and sputtering (SES) method. The crystal structure, surface morphology, composition, optical and electrical properties of CdSe films were investigated. XRD analysis revealed that the SES deposited precursors after annealing, were converted into hexagonal CdSe films with a preferential orientation. FE-SEM results showed that the CdSe films obtained at 400 °C and 500 °C were dense, uniform and had greater grains than that obtained at 300 °C, while pores and peeling of CdSe film appeared at 600 °C. EDS results showed that all CdSe films were Cd-rich, and the composition of the CdSe film prepared at 500 °C was closest to the ideal stoichiometric ratio. The formation of CdSe films included atomic diffusions, the selenization reaction and CdSe grain growth, accompanied by volatilization of Cd and Se. The CdSe films exhibited good transmittance of about 60–85 % and band gaps of 1.57–1.67 eV. The PL spectra showed that the CdSe films prepared at different temperatures had a strong emission peak at 782 nm and a weak emission peak at 829 nm, which were possibly caused by the band-to-band transitions and defect emissions. In addition, electrical measurements showed that the CdSe films were n-type conductivity, the resistivity was in the range of 9.65 × 10 2 -7.55 × 10 3 Ω cm, and the carrier concentration was in the range of 5.72 × 10 14 -2.99 × 10 15 cm −3 .

materials science, multidisciplinary,optics
Effect of the hydrogen annealing on the properties of Mo/CuIn1-xGaxSe2/CdS solar cells junction

Hui Zhang,Shaolin Ding,Huixiang Tang,Huirui Zhang,Xiangyang Ma,Deren Yang,Weiyi Liu,Jiayou Zhang,Yun Sun

2004-01-01

Abstract:Mo/CuIn1-xGaxSe2/CdS (CIGS) solar cells junction were annealed at 500°C in H2 and N2 for various period of time, respectively. Then the effects of hydrogen and nitrogen annealing on structure, morphology, and electrical properties of thin films were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and I-V curve. It was indicated that the turn-on voltage of p-n junction of CIGS decreased and the properties of p-n junction improved after annealing in H2 at 500°C with various period of time so that the efficiency of the solar cells could be increased. Meanwhile, the size of large particles on the surface of the CIGS samples decreased with the increase of the annealing time and the formation of CuIn0.7Ga0.3Se phase was enhanced. However, for the CIGS samples with annealing in N2 at 500'C or without annealing, there are no obvious effect of annealing on the I-V properties of the CIGS samples. It is considered that the improvement of the CIGS junction performance is not due to the normal annealing but the hydrogen passivation.
Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Long Sun,Hong-Liang Lu,Hong-Yan Chen,Tao Wang,Xin-Ming Ji,Wen-Jun Liu,Dongxu Zhao,Anjana Devi,Shi-Jin Ding,David Wei Zhang

DOI: https://doi.org/10.1186/s11671-016-1822-x

2017-01-01

Nanoscale Research Letters

Abstract:The influences of annealing temperature in N 2 atmosphere on interfacial chemical properties and band alignment of AlN/Si structure deposited by atomic layer deposition have been investigated based on x-ray photoelectron spectroscopy and spectroscopic ellipsometry. It is found that more oxygen incorporated into AlN film with the increasing annealing temperature, resulting from a little residual H 2 O in N 2 atmosphere reacting with AlN film during the annealing treatment. Accordingly, the Si–N bonding at the interface gradually transforms to Si–O bonding with the increasing temperature due to the diffusion of oxygen from AlN film to the Si substrate. Specially, the Si–O–Al bonding state can be detected in the 900 °C-annealed sample. Furthermore, it is determined that the band gap and valence band offset increase with increasing annealing temperature.
Effects of Post Annealing Atmosphere on Electrical and Optical Properties of SnO2：F Thin Films

李铭,高倩,刘涌,宋晨路,韩高荣

DOI: https://doi.org/10.14136/j.cnki.issn1673-2812.2012.01.004

2012-01-01

Abstract:The SnO2：F thin films with low-emission property have been widely used as a dominating energy saving glass.Effect of post annealing treatment on the low-emission has attracted attention for both academic research and practical applications worldwide.In this work,different annealing approaches were carried out on the as-deposited SnO2：F（~250nm,with ~20nm SiO2 barrier on glass substrate） glass.It was found that the structural,compositional,electrical,and optical characteristics were significantly influenced by annealing atmosphere,under air or nitrogen.By calculating the lattice parameters and volume data of the unit cells for SnO2：F thin films,a reasonable explanation of the decrease in low-e property was proposed.
Effects of Annealing at Ar Ambient on the Physical Properties of Zn0.66Co0.34O Thin Film

LIU Pu-cheng,QIU Dong-jiang

DOI: https://doi.org/10.3321/j.issn:1001-9731.2007.07.014

2007-01-01

Abstract:Zn0.66Co0.34O films were grown by reactive e-beam evaporation at 250℃ and then annealed in Ar ambient at 500℃ for 1h.Scanning electron microscope,X-ray diffraction(XRD) and vibrating sample magnetometer(VSM) were employed to characterize the microstructure and magnetic properties of Zn0.66Co0.34O film.XRD measurements revealed that both of as-grown and annealed Zn0.66Co0.34O films are homogeneous with a pure wurtzite structure.Room temperature M-H curves tested by VSM show that the as-grown film is superparamagnetic while the annealed film demonstrates a mixed magnetic characteristics of ferromagnetism and superparamagnetism.Such results suggest that by annealing treatment,some small crystal grains coalesced into relatively larger crystallites,whose sizes exceeded the superparamagnetic critical radius of Zn0.66Co0.34O material and correspondingly showed their ferromagnetic nature.However,probably duo to the fact that other grains still kept superparamagnetic,so the film emerged a mixed magnetic state of superparamagnetism and ferromagnetism.
Effects of Growth Temperature and Annealing on Properties of Zn3sn2o7 Thin Films and Application in Tfts

Yong-Yue Chen,Xi-Kun Cai,Zhen-Yu Ye,Xiong Wang,Bing-Po Zhang,Hui-Zhen Wu

DOI: https://doi.org/10.1007/s11664-013-2589-9

IF: 2.1

2013-01-01

Journal of Electronic Materials

Abstract:The effects of growth temperature and annealing on the physical properties of Zn3Sn2O7 thin films were investigated in this work. The Zn3Sn2O7 thin films were deposited on glass substrates by radio frequency (rf) magnetron sputtering. It is found that the films are amorphous regardless of the growth temperature. The film grown at room temperature shows the highest mobility of 8.1 cm2 V−1 s−1 and the lowest carrier concentration of 2.0 × 1015 cm−3. The highest carrier concentration of 1.6 × 1019 cm−3 is obtained at the growth temperature of 250°C. Annealing treatment of the Zn3Sn2O7 thin films resulted in increases of carrier concentration and mobility. The average transmittance of the as-deposited and annealed films reaches 80%. By using a Zn3Sn2O7 thin film as the channel and a Ta2O5 thin film as the insulating layer, we fabricated transparent Zn3Sn2O7 thin-film transistors with field-effect mobility of 21.2 cm2 V−1 s−1, on/off current ratio of 105, threshold voltage of 0.8 V, and subthreshold swing of 0.8 V/decade.
Effects of Post Annealing Atmosphere on Low-emission of SnO2: F Thin Films

Gao Qian,Li Ming,Liu Yong,Song Chenlu,Ge Yankai,Han Gaorong

2012-01-01

Rare Metal Materials and Engineering

Abstract:The SnO2:F thin films With low-emission property have been widely used as a dominating kind of energy saving glass. Different annealing approaches were carried out on the as-deposited SnO2:F (similar to 250 nm, with similar to 20 nm SiO2 barrier on glass substrate) thin films. It is found that the electrical and optical characteristics are significantly influenced by annealing atmosphere. The low-emission property of SnO2: F decreases sharply after post annealing in air, while partly recovers after annealing in air followed by annealing in nitrogen. In addition, the mechanism has also been successfully uncovered.
The Effect of Thermal Annealing of Mo Film on the CuInSe2 Layer Texture and Device Performance

Jun Tong,Hai-Lin Luo,Zhu-An Xu,Hao Zeng,Xu-Dong Xiao,Chun-Lei Yang

DOI: https://doi.org/10.1016/j.solmat.2013.06.039

2013-01-01

Abstract:The influence of annealing treatment of molybdenum (Mo) film on the growth of CuInSe2 (CIS) thin film has been studied. We show that Mo film is with much better electrical conductivity and adhesion after being annealed in vacuum. It is found that annealing of Mo film not only modifies the orientation of In2Se3 (IS) precursor, but also the texture of CIS crystal. Thermally treated Mo film favors the growth of (220/204) oriented CIS film. CIS solar cell grown on annealed Mo film is found to be with higher device efficiency, which is attributed to the increased fill factor (FF).
Influence of annealing on the surface structure evolution of intrinsic p-type HgCdTe films.

Jiyuan Chen,Lu Li,Yang Lin,Qiuyan Li,Li Liu,Xiaoying Cui

DOI: https://doi.org/10.1016/j.surfin.2023.103451

IF: 6.2

2023-10-12

Surfaces and Interfaces

Abstract:In this study, scanning electron microscopy, atomic force microscopy, Raman spectroscopy , X-ray photoelectron spectroscopy and the Hall effect were used to characterize the microscopic morphology, structural features and electrical properties of a HgCdTe film surface before and after annealing. The effect of annealing on the surface quality of the films was studied in detail. The results showed that the annealing treatment reduced the roughness, improve the denseness and uniformity and ameliorate the surface crystallinity. It also eliminated the defects, such as stress and stacking layer errors, caused by lattice distortion during the growth of the HgCdTe films. An increase in surface carrier concentration and mobility after annealing and improved electrical properties of the intrinsic p-type HgCdTe materials were also observed. It is therefore shown that annealing had a significant effect on improving the surface quality of HgCdTe films.

chemistry, physical,physics, applied, condensed matter,materials science, coatings & films
The effects of air-annealing on the performance of optical-electrical assessment of sputtered CdS film towards the Ag/n-CdS/p-Si(100)/Al photodetectors

Sakshi Pathak,Shristi Chaudhary,Monika Shrivastav,Naveen Kumar,Sanjeev Varshney,Mahendra Kumar,Sachin Kumar Sharma,Fernando Guzman,Sanjeev Kumar,Chandra Kumar

DOI: https://doi.org/10.1016/j.optmat.2024.115117

IF: 3.754

2024-03-08

Optical Materials

Abstract:The CdS thin film is the most important narrow band gap n-type layer for efficient optoelectronics applications. Here, we report CdS thin film on silicon and glass substrates through direct current(dc) magnetron sputtering technique. The effect of air-annealing on deposited thin films & its impact on morphological and optoelectrical characteristics of CdS thin films have been explored in this study. The sputtered CdS thin films were characterized using the scanning electron microscopy(SEM), atomic force microscopy(AFM), diffuse reflectance spectrophotometer and solar simulator system. FESEM images show the uniform, homogeneous and crack free grain, AFM topography exhibits the roughness increases with increasing air-annealing. EDS spectra confirm the elemental composition of Cd and S in deposited thin film. The optical analysis showed the reduction of energy gap from 2.36 eV to 2.29 eV and the estimated Urbach tail increases with increasing air-annealing. Moreover, the complex reflective index, dielectric constant, tangent loss, volume energy & surface energy loss studies were effectively influenced by the air-annealing conditions. The impact of air-annealing on the performance of Ag/Ni:CdS/Si/Al photodetectors are analyzed through I–V measurement at room temperature. The detector parameters such as responsivity (R) detectivity (D*) snd quantum efficiency have been estimated and discussed in detail. Here the responsivity and detectivity decreases and quantum efficiency increases with increasing air-annealing. The responsivity, and detectivity of CdS film are in the range of 0.42 and 0.46 AW -1 and 2.58 × 10 11 to 4.09 × 10 11 Jones, respectively. The effect of the air-annealing was noticeable and obviously improved the detection parameters of the designed photodetectors device.

materials science, multidisciplinary,optics
Effect of heat treatment temperature on preparation and characterization of CuInSe2 thin films

Yadav, Jagavendra

DOI: https://doi.org/10.1007/s10854-023-10111-8

2023-03-08

Abstract:The annealing temperature effects on the optical, structural, surface, and morphological characteristics of CIS thin films were examined. XRD study indicated that when the annealing temperature increases crystallinity and intensity peak increase. Both Raman and XRD measurements demonstrate that the CIS thin film's crystalline quality and grain size rise as the annealing temperature rises. Annealing also enhanced grain size. With increasing annealing temperature, the optical band gap is reduced.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Effect of rapid thermal annealing on photoluminescence and crystal structures of CdZnO films

Ruijie Zhang,Peiliang Chen,Yuanyuan Zhang,Xiangyang Ma,Deren Yang

DOI: https://doi.org/10.1016/j.jcrysgro.2010.03.013

IF: 1.8

2010-01-01

Journal of Crystal Growth

Abstract:Hexagonal CdxZn1−xO films with low and high Cd contents (x=0.10 and 0.52) have been deposited by reactive direct-current magnetron sputtering, respectively. The as-deposited CdxZn1−xO films hardly exhibit detectable photoluminescence (PL). Once subjected to rapid thermal annealing (RTA) at sufficiently high temperatures, the CdxZn1−xO films exhibit pronounced PL. For the Cd0.10Zn0.90O films subjected to RTA at 500°C and above, they are of single hexagonal phase. The enhanced near-band-edge (NBE) emission is somewhat blue-shifted with the increase of RTA temperature. While for the Cd0.52Zn0.48O films, they are transformed into hexagonal (Cd-incoporated ZnO) and cubic (Zn-incoporated CdO) phases due to the RTA at 500°C and above. The NBE emissions from the two above-mentioned phases are well revealed in the PL spectra.
In Situ Optical Characterizations of the Annealing Effects Upon Sno2: F Films by Spectroscopic Ellipsometry

Guangzhong Yuan,Kangkai Wang,Ming Li,Qian Gao,Yong Liu,Shaohui Jia,Chenlu Song,Gaorong Han

DOI: https://doi.org/10.1088/2053-1591/3/10/105048

IF: 2.025

2016-01-01

Materials Research Express

Abstract:In situ study of the annealing effects, up to 600 degrees C, upon the optical performance of SnO2: F films have been successfully conducted with spectroscopic ellipsometry. The thickness and optical parameters were obtained by the regression of the measured ellipsometry parameters using a five-layer model. The results show that the re-densification of the SnO2: F layers occurs at above 200 degrees C, resulting in an irreversible thickness reducing from about 326 nm to about 321 nm. The refractive index of the SnO2: F layer increases with temperature and decreases in the cooling period. The in situ temperature dependence of the average refractive index has a good agreement with the sheet resistance measurement results, not only verifying the annealing process deteriorates the low-emissivity performance, but also demonstrates that spectroscopic ellipsometry method is a suitable optical characterization technique to adjust the on-line coating process of float glass.
Annealing Effects on the Chemical Deposited Cds Films and the Electrical Properties of Cds/Cdte Solar Cells

Junfeng Han,Cheng Liao,Tao Jiang,Ganhua Fu,V. Krishnakumar,C. Spanheimer,G. Haindl,Kui Zhao,A. Klein,W. Jaegermann

DOI: https://doi.org/10.1016/j.materresbull.2010.11.014

IF: 5.6

2011-01-01

Materials Research Bulletin

Abstract:CdS layers grown by chemical bath deposition (CBD) are annealed in the oxygen and argon–hydrogen atmosphere respectively. It has been found that the open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with oxygen before the deposition of CdTe by close spaced sublimation (CSS), while the performance of the solar cell decreases when the CBD CdS is annealed with argon–hydrogen. Electronic properties of the CdS films are investigated using X-ray photo-electron spectroscopy (XPS), which indicates that the Fermi level is shifting closer to the conduction band after annealing in the oxygen and consequently a higher open circuit voltage of the solar cell can be obtained.

Effects of Annealing in N2 and Air after CdCl2 Treatment on the Properties of CdS Thin Films

Study on the Annealing of Cd1-xZnxTe Alloys

Effect of CdCl2 Annealing Treatment on Thin CdS Films Prepared by Chemical Bath Deposition

EFFECT OF ANNEALING ON THE CuInS2 THIN FILMS PREPARED BY CHEMICAL BATH DEPOSITION

Studies on the effects of annealing on the structural and optical properties of nanocrystalline ZnCdS thin films

Annealing effects of In2O3 thin films on electrical properties and application in thin film transistors

Effects of Post-Annealing Treatment on the Structural and Optical Properties of Cubic Mg Chi Zn1-Chi O Thin Films Grown on Sapphire

The effect of annealing temperature on the properties of CdSe thin films prepared by annealing the SES deposited precursors

Effect of the hydrogen annealing on the properties of Mo/CuIn1-xGaxSe2/CdS solar cells junction

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Effects of Post Annealing Atmosphere on Electrical and Optical Properties of SnO2：F Thin Films

Effects of Annealing at Ar Ambient on the Physical Properties of Zn0.66Co0.34O Thin Film

Effects of Growth Temperature and Annealing on Properties of Zn3sn2o7 Thin Films and Application in Tfts

Effects of Post Annealing Atmosphere on Low-emission of SnO2: F Thin Films

The Effect of Thermal Annealing of Mo Film on the CuInSe2 Layer Texture and Device Performance

Influence of annealing on the surface structure evolution of intrinsic p-type HgCdTe films.

The effects of air-annealing on the performance of optical-electrical assessment of sputtered CdS film towards the Ag/n-CdS/p-Si(100)/Al photodetectors

Effect of heat treatment temperature on preparation and characterization of CuInSe2 thin films

Effect of rapid thermal annealing on photoluminescence and crystal structures of CdZnO films

In Situ Optical Characterizations of the Annealing Effects Upon Sno2: F Films by Spectroscopic Ellipsometry

Annealing Effects on the Chemical Deposited Cds Films and the Electrical Properties of Cds/Cdte Solar Cells