Abstract:Metal oxide semiconductor (MOS) gas sensors are widely used for gas detection. Typically, the hotplate element is the key component in MOS gas sensors which provide a proper and tunable operation temperature. However, the low power efficiency of the standard hotplates greatly limits the portable application of MOS gas sensors. The miniaturization of the hotplate geometry is one of the most effective methods used to reduce its power consumption. In this work, a new method is presented, combining electron beam lithography (EBL) and focused ion beam (FIB) technologies to obtain low power consumption. EBL is used to define the low-resolution section of the electrode, and FIB technology is utilized to pattern the high-resolution part. Different Au++ ion fluences in FIBs are tested in different milling strategies. The resulting devices are characterized by scanning electron microscopy (SEM), atomic force microscopy (AFM), and secondary ion mass spectrometry (SIMS). Furthermore, the electrical resistance of the hotplate is measured at different voltages, and the operational temperature is calculated based on the Pt temperature coefficient of resistance value. In addition, the thermal heater and electrical stability is studied at different temperatures for 110 h. Finally, the implementation of the fabricated hotplate in ZnO gas sensors is investigated using ethanol at 250 °C.

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