A highly stable, nanotube-enhanced, CMOS-MEMS thermal emitter for mid-IR gas sensing
Daniel Popa,Richard Hopper,Syed Zeeshan Ali,Matthew Thomas Cole,Ye Fan,Vlad-Petru Veigang-Radulescu,Rohit Chikkaraddy,Jayakrupakar Nallala,Yuxin Xing,Jack Alexander-Webber,Stephan Hofmann,Andrea De Luca,Julian William Gardner,Florin Udrea
DOI: https://doi.org/10.1038/s41598-021-02121-5
2021-11-25
Abstract:The gas sensor market is growing fast, driven by many socioeconomic and industrial factors. Mid-infrared (MIR) gas sensors offer excellent performance for an increasing number of sensing applications in healthcare, smart homes, and the automotive sector. Having access to low-cost, miniaturized, energy efficient light sources is of critical importance for the monolithic integration of MIR sensors. Here, we present an on-chip broadband thermal MIR source fabricated by combining a complementary metal oxide semiconductor (CMOS) micro-hotplate with a dielectric-encapsulated carbon nanotube (CNT) blackbody layer. The micro-hotplate was used during fabrication as a micro-reactor to facilitate high temperature (>700 [Formula: see text]C) growth of the CNT layer and also for post-growth thermal annealing. We demonstrate, for the first time, stable extended operation in air of devices with a dielectric-encapsulated CNT layer at heater temperatures above 600 [Formula: see text]C. The demonstrated devices exhibit almost unitary emissivity across the entire MIR spectrum, offering an ideal solution for low-cost, highly-integrated MIR spectroscopy for the Internet of Things.