The Photoluminescence from (eu, Yb) Co-Doped Silicon-Rich Si Oxides

Chenglin Heng,Wenyong Su,Qiwei Zhang,Xiaoqian Ren,Penggan Yin,Huiping Pan,Shude Yao,Terje G. Finstad
DOI: https://doi.org/10.1016/j.jlumin.2014.04.035
2014-01-01
Advanced Materials Research
Abstract:We report on photoluminescence (PL) properties of europium (Eu) and ytterbium (Yb) co-doped silicon oxide films with different Si excess. After annealing the films in N2, strong PL were observed from Eu and Yb3+ ions and their intensities are correlated. The PL intensity of Eu is mainly from 3+ for no and relatively low temperature anneals (<900 °C) while the Eu2+ emission is dominating for annealing at 1000 °C or above in the co-doped Si-rich oxide films. Transmission electron microscopy shows amorphous (Eu, Yb, Si, O)-containing precipitates in the Si-rich oxide during 1000-1200 °C annealing and these precipitates are considered to be responsible for the Eu2+-related luminescence.
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