Abstract:The formation and the luminescence behavior of the Eu(TTFA)(3) sol-gel films have been investigated. The Thenoyltrifluoroacetone (TTFAH) was dissolved in ethanol in advance, and then the EuCl3 and ethanol containing TTFAH were introduced into the initial precursor sol. The precursor sol was dip-coated onto substrates to form Eu(TTFA)(3) doped sol-gel films. The luminescence intensity of the Eu(TTFA)(3) doped sol-gel films was significantly increased with the increase of film thickness. However, there existed an efficient luminescence layer in the Eu(TTFA)(3) doped sol-gel films. The luminescence intensity did not increase when increasing the film thickness above the thickness of the efficient luminescence layer. The thickness of the efficient luminescence layer was related to the Eu(TTFA)(3) concentration in the film. The higher the Eu(TTFA)(3) concentration, the thinner the efficient luminescence layer. The heat treatment temperature of the films had also influence on the luminescence intensity. With the increase of the temperature, the Eu(TTFA)(3) formed gradually and luminescence intensity increased. But when the temperature was higher than 150 degrees C, the luminescence intensity decreased rapidly due to the decomposition of the Eu(TTFA)(3). (C) 1999 Elsevier Science S.A. All rights reserved.

Fabrication and luminescence properties Eu3+ doped SiO2 thin films

Preparation and Photoluminescence Properties of Eu3+-Doped Al2O3 Films on Silicon Substrates by the Sol-gel Method

Photoluminescence of Tb3+ Doped SiNx Films Grown by Plasma-Enhanced Chemical Vapor Deposition

Luminescence Behavior of Eu(Ttfa)(3) Doped B2o3-Sio2 Film Prepared by Sol-Gel Process

A Facile Method for the Fabrication of Luminescent Eu3+-Doped SiO2 Nanowires

Preparation and Luminescence of Nano-Sized In2O3and Rare-Earth Co-Doped SiO2thin Films

The Photoluminescence from (eu, Yb) Co-Doped Silicon-Rich Si Oxides

Intense Photoluminescence from Eu-doped Silicon-Rich Silicon Oxide Films Prepared by Electron Beam Evaporation

Photoluminescence of Tb3+-doped SiNx films with different Si concentrations

The Luminescence Enhancement Of Eu3+ Ion And Sno2 Nanocrystal Co-Doped Sol-Gel Sio2 Films

The Luminescence Enhancement of Eu 3+ Ion and SnO 2 Nanocrystal Co-Doped Sol Gel SiO 2 Films

Novel Optical Characteristics of Eu2+doped and Eu2+, Ce3+co-doped LiSi2N3phosphors by Gas-Pressed Sintering

Structure and Luminescence Evolution of Annealed Europium-doped Silicon Oxides Films

ZnO:Eu thin-films: Sol–gel derivation and strong photoluminescence from 5D0→7F0 transition of Eu3+ ions

Luminescence of Bi3+ Ions and Energy-Transfer from Bi3+ Ions to Eu3+ Ions in Silica Glasses Prepared by the Sol-Gel Process

Influences of Doping and Annealing Conditions on the Photoluminescence from In2O3 Nanocrystals and Eu3+ Ions Co-Doped Sol-Gel SiO2 Films

Study of Eu3+-doped Luminescence Glasses Prepared by a Sol-Gel Process

Sensitizing Properties of Luminescence Centers on the Emission of Er3+ in Si-Rich Sio2 Film

Luminescence Behavior Of Eu(Ttfa)(3) Doped Sol-Gel Films

Enhancing the Emission Intensity and Decreasing the Full Widths at Half Maximum of Ba3Si6O12N2:Eu(2+) by Mg(2+) Doping.

Luminescence Enhancement of Ce3+/Tb3+ Co-Doped SiO2 Thin Film on Silicon Substrate Prepared by Sol-Gel Spin Coating Process