Abstract:Based on first principles calculations and self-consistent solution of the linearized Boltzmann-Peierls equation for phonon transport approach within a three-phonon scattering framework, we characterize lattice thermal conductivities k of freestanding silicene, germanene and stanene under different isotropic tensile strains and temperatures. We find a strong size dependence of k for silicene with tensile strain, i.e., divergent k with increasing system size; however, the intrinsic room temperature k for unstrained silicene converges with system size to 19.34 W m(-1) K(-1) at 178 nm. The room temperature k of strained silicene becomes as large as that of bulk silicon at 84 μm, indicating the possibility of using strain in silicene to manipulate k for thermal management. The relative contribution to the intrinsic k from out-of-plane acoustic modes is largest for unstrained silicene, ∼39% at room temperature. The single mode relaxation time approximation, which works reasonably well for bulk silicon, fails to appropriately describe phonon thermal transport in silicene, germanene and stanene within the temperature range considered. For large samples of silicene, k increases with tensile strain, peaks at ∼7% strain and then decreases with further strain. In germanene and stanene, increasing strain hardens and stabilizes long wavelength out-of-plane acoustic phonons, and leads to similar k behaviors to those of silicene. These findings further our understanding of phonon dynamics in group-IV buckled monolayers and may guide transfer and fabrication techniques for these freestanding samples and engineering of k by size and strain for applications of thermal management and thermoelectricity.

Phonon instability and ideal strength of silicene under tension

Dumbbell Silicene: A Strain-Induced Room Temperature Quantum Spin Hall Insulator

Strain and chirality effects on the mechanical and electronic properties of silicene and silicane under uniaxial tension

First-principles calculations of mechanical and electronic properties of silicene under strain

Phonon-mediated Superconductivity in Silicene

Strain Induced Phase Transitions in Silicene Bilayers: a First Principles and Tight-Binding Study

Tensile strains give rise to strong size effects for thermal conductivities of silicene, germanene and stanene

Tunable Electronic and Optical Properties of Monolayer Silicane under Tensile Strain: a Many-Body Study.

Dirac Points And Van Hove Singularities Of Silicene Under Uniaxial Strain

First-Principles Study of the Stability of Silicane and Germanane under Strain

Atomistic Simulations on the Mechanical Properties of Silicene Nanoribbons under Uniaxial Tension

Strain effects on monolayer MoSi2N4: ideal strength and failure mechanism

Anomalous strain effect on the thermal conductivity of low-buckled two-dimensional silicene

Tuning the Electronic Structure of Silicene and Germanene by Biaxial Strain and Electric Field

Unexpectedly Large Tunability of Lattice Thermal Conductivity of Monolayer Silicene via Mechanical Strain

Elasticity, Stability and Ideal Strength of $β$-SiC in plane-wave-based ab initio calculations

Observation of Van Hove Singularities in Twisted Silicene Multilayers.

Phonon Properties, Thermal Expansion, And Thermomechanics Of Silicene And Germanene

Effects of Temperature and Strain Rate on the Mechanical Properties of Silicene

The Ideal Tensile Strength and Phonon Instability of Borophene

Investigation of Electron-Phonon Coupling in Epitaxial Silicene by In-situ Raman Spectroscopy