Abstract:Recently, two-dimensional monolayer MoSi2N4 with hexagonal structure was successfully synthesized in experiment (Hong et al 2020 Science 369, 670). The fabricated monolayer MoSi2N4 is predicted to have excellent mechanical properties. Motived by the experiment, we perform first-principles calculations to investigate the mechanical properties of monolayer MoSi2N4, including its ideal tensile strengths, critical strains, and failure mechanisms. Our results demonstrate that monolayer MoSi2N4 can withstand stresses up to 51.6 and 49.2 GPa along zigzag and armchair directions, respectively. The corresponding critical strains are 26.5% and 17.5%, respectively. For biaxial strain, the ideal tensile strength is 50.6 GPa with a critical strain of 19.5%. Compared with monolayer MoS2, monolayer MoSi2N4 possesses much higher elastic moduli and ideal tensile strengths for both uniaxial and biaxial strains. Interestingly, the critical strain and failure mechanism of zigzag direction in MoSi2N4 are almost the same as those of armchair direction in MoS2, while the critical strain and failure mechanism of armchair direction for MoSi2N4 are similar to the ones of zigzag direction for MoS2. Our work reveals the remarkable mechanical characteristics of monolayer MoSi2N4.

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to explore the mechanical properties of monolayer MoSi₂N₄ under different strain conditions, including its ideal tensile strength, critical strain, and failure mechanisms. Specifically: 1. **Material Background**: - Monolayer MoSi₂N₄ is a two - dimensional material with a hexagonal structure and has been successfully synthesized recently by chemical vapor deposition (Hong et al., 2020, Science). This material is predicted to have excellent mechanical properties. 2. **Research Motivation**: - Experiments show that monolayer MoSi₂N₄ has good stability under environmental conditions and exhibits high electron and hole mobilities (4 to 6 times higher than monolayer MoS₂). In addition, it has a moderate bandgap (1.94 eV), making it potentially applicable in the fields of nanoelectronics and optoelectronics. 3. **Specific Problems**: - The authors systematically analyzed the mechanical properties of monolayer MoSi₂N₄ under uniaxial and biaxial tensile strains through first - principles calculations, including: - **Ideal Tensile Strength**: The maximum stresses of monolayer MoSi₂N₄ in the zigzag direction and the armchair direction are 51.6 GPa and 49.2 GPa respectively; and it is 50.6 GPa under biaxial tensile. - **Critical Strain**: The critical strains in the zigzag direction and the armchair direction are 26.5% and 17.5% respectively; and it is 19.5% under biaxial tensile. - **Failure Mechanisms**: Under uniaxial tensile in the zigzag direction, the failure mechanism is phonon instability; under uniaxial tensile in the armchair direction, the failure mechanism is elastic instability; and under biaxial tensile, the failure mechanism is also phonon instability. 4. **Comparison and Significance**: - Compared with monolayer MoS₂, monolayer MoSi₂N₄ has significantly higher elastic modulus and ideal tensile strength under both uniaxial and biaxial tensile. These results reveal the excellent mechanical characteristics of monolayer MoSi₂N₄ and provide theoretical support for further understanding its basic mechanical properties and regulating its physical properties through strain engineering. In conclusion, this paper aims to comprehensively understand the mechanical behavior of monolayer MoSi₂N₄, especially its strength limits and failure modes under different strain conditions, thereby providing a scientific basis for its optimized design in practical applications.

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