Abstract:We investigate magnetic and spin-transport properties of the zigzag-edge nanoribbon structures of two-dimensional (2D) SiP3 system within first-principle calculations. Based on the edge terminations, the nanoribbons can be categorized in three subclasses, two of them with even number of silicon (Si) atoms and one of them with odd number of Si atoms in the one-dimensional unitcell with antiferromagnetic bulk spin-ordering, analogous to their 2D counterpart. All the ribbons exhibit indirect band-gap semiconducting behavior and the gap decreases with increase in width of the ribbons. The nanoribbon with only phosphorus (P) atoms at least along one of the edges show half-metallic behavior over a small bias window, when probed with cross-ribbon external electric field. Especially, the nanoribbon with odd number of Si atoms stabilizes in a ground state with net non-zero magnetization and exhibits half-metallicity only under forward bias. Such anisotropic half-metallicity along with the precise control of the electronic properties in terms of edge and external bias manipulation hold immense potential for spintronic and switching device applications.

The Study of the P Doped Silicene Nanoribbons with First-Principles

First Principles Study on Phosphorus or Boron Doping in Si Nanocrystals with Various Sizes Embedded in SiO2 Matrix

Nitrogen and Boron Substitutional Doped Zigzag Silicene Nanoribbons: Ab Initio Investigation

The magnetic and transport properties of edge passivated silicene nanoribbon by Mn atoms

First-principles study of doping phosphorene supercell and electrical transport properties

Direct observation of the distribution of impurity in phosphorous/boron co-doped Si nanocrystals

Doping Si Nanocrystals Embedded in Sio2 with P in the Framework of Density Functional Theory

Doping silicon nanocrystals with boron and phosphorus

Ab Initio Molecular Dynamics Simulation Study on Phosphorus/Boron Co-Doped Si Nanocrystals/SiO2 Core/Shell Structures

Density Functional Theory Study on the B Doping and B/P Codoping of Si Nanocrystals Embedded in SiO2

Tuning the Electronic and Magnetic Properties of Zigzag Silicene Nanoribbons by Edge Hydrogenation and Doping

Comparative study on the localized surface plasmon resonance of boron- and phosphorus-doped silicon nanocrystals.

Modulation of the electronic and magnetic properties of the silicene nanoribbons by a single C chain

First-Principles Study of 2.2 Nm Silicon Nanocrystals Doped with Boron

Structural and Electronic Properties of Substitutionally Doped Armchair Silicene Nanoribbons

Anisotropic half-metallicity in zigzag edge SiP3 nanoribbons

Tuning the Electronic and Magnetic Properties of the Si Nanoribbons Through Dangling Bond

Enhanced Optical and Electronic Properties of Silicon Nanosheets by Phosphorus Doping Passivation

First-principles Study of Electronic Properties of F-terminated Silicon Nanoribbons

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Critical role of dopant location for P-doped Si nanocrystals