Abstract:The geometry and electronic properties of bilayer silicene nanoribbons with different widths, zigzag, armchair, and edge hydrogenation stacking modes were investigated using the self-consistent charge density functional tight-binding (SCC-DFTB) method. The results show that edge hydrogenation enhances the binding energy of the nanoribbon by adsorbing hydrogen to reduce the hanging bonds of Si, thus stabilizing the silicene and adjusting its electronic properties by affecting the energy gap. With the increase of nanoribbon width, the regular fold of the nanoribbon surface increases. Edge hydrogenation can significantly improve the binding energy of nanoribbons. For the top-type stacking (type-AA) nanoribbon, when the width of the nanoribbon is < 10, the energy gap is significantly affected by edge hydrogenation, and the energy gap decreases significantly with the increase of width. When n L > 10, the energy gap is not affected by the width, and the nanoribbon gradually shows stable semi-metallic properties. For type-AB nanoribbons, the energy gap shows a W-shaped fluctuation with increasing width under the effect of edge hydrogenation. Comparing the two stacking methods, we can find that the energy gap of the misaligned stacked nanoribbons is more sensitive to changes in the width and edge hydrogenation. This study has realized the transformation of silicene nanoribbons from semiconductor to semi-metal and metal properties in different ways. The electrons in the nanoribbons are transferred to the protruding parts of the fold or bend in the structure. The larger the extent of the protruding parts of the structure, the greater the amount of charge transferred.

Modulation of the electronic and magnetic properties of the silicene nanoribbons by a single C chain

Structural and Electronic Properties of a Single C Chain Doped Zigzag Silicene Nanoribbon

Structural and Electromagnetic Properties of Double C Chains Decorated Zigzag Silicene Nanoribbon

Tuning the Electronic and Magnetic Properties of the Si Nanoribbons Through Dangling Bond

Tuning the Electronic and Magnetic Properties of Zigzag Silicene Nanoribbons by Edge Hydrogenation and Doping

Structural and Electronic Properties of A Single Si Chain Doped Zigzag Aln Nanoribbon

Dangling Bond Modulating the Electronic and Magnetic Properties of Zigzag Sige Nanoribbon

Silicane Nanoribbons: Electronic Structure and Electric Field Modulation

Vacancy Dependent Structural, Electronic, and Magnetic Properties of Zigzag Silicene Nanoribbons:Co

Nitrogen and Boron Substitutional Doped Zigzag Silicene Nanoribbons: Ab Initio Investigation

Electronic and Magnetic Properties of Zigzag Silicene Nanoribbons with Stone–Wales Defects

Tuning the Electronic and Magnetic Properties of Zigzag Silicene Nanoribbons by 585 Defects

The Study of the P Doped Silicene Nanoribbons with First-Principles

Realizing Stable Half-Metallicity in Zigzag Silicene Nanoribbons with Edge Dihydrogenation and Chemical Doping

Electronic characterization of bilayer silicene nanoribbons

Electronic and magnetism properties of half-bare zigzag silicon carbon nanoribbons from hybrid density functional calculations

Bandgap Modulations of Silicon Carbon Nanoribbons by Transverse Electric Fields: A Theoretical Study

Topological and magnetic phase transition in silicene-like zigzag nanoribbons

The magnetic and transport properties of edge passivated silicene nanoribbon by Mn atoms

Structural, Electronic and Magnetic Properties of the Si Chains Doped Zigzag Aln Nanoribbons

Effect of Edge Dual-Hydrogenation on Electronic and Magnetic Properties of Armchair Silicon Carbide Nanoribbons