Abstract:For the epitaxial growth of Ga-based III-V semiconductor nanowires (NWs) on Si, Ga droplets could provide a clean and compatible solution in contrast to the common Au catalyst. However, the use of Ga droplets is rather limited except for that in Ga-catalyzed GaAs NW studies in a relatively narrow growth temperature (Ts) window around 620 °C on Si. In this paper, we have investigated the two-step growth of Ga-catalyzed III-V NWs on Si (111) substrates by molecular-beam epitaxy. First, by optimizing the surface oxide, vertically aligned GaAs NWs with a high yield are obtained at Ts = 620 °C. Then a two-temperature procedure is adopted to preserve Ga droplets at lower Ts, which leads to an extension of Ts down to 500 °C for GaAs NWs. Based on this procedure, systematic morphological and structural studies for Ga-catalyzed GaAs NWs in the largest Ts range could be presented. Then within the same growth scheme, for the first time, we demonstrate Ga-catalyzed GaAs/GaSb heterostructure NWs. These GaSb NWs are axially grown on the GaAs NW sections and are pure zinc-blende single crystals. Compositional measurements confirm that the catalyst particles indeed mainly consist of Ga and GaSb sections are of high purity but with a minor composition of As. In the end, we present GaAsSb NW growth with a tunable Sb composition. Our results provide useful information for the controllable synthesis of multi-compositional Ga-catalyzed III-V semiconductor NWs on Si for heterogeneous integration.

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Lithography-Free Nanoscale Patterned Growth of Gaas on Si(001) with Sub-100-Nm Silica Nanoparticles by Molecular Beam Epitaxy

Epitaxial growth of high-quality GaAs on Si(001) using ultrathin buffer layers

Epitaxy of GaAs thin film with low defect density and smooth surface on Si substrate

Molecular Beam Epitaxy of High-Quality GaAs on Si (001) by Multi-Time Thermal Cycle Annealing

Selectively Grown Gaas Nanodisks on Si(100) by Molecular Beam Epitaxy

Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001)

The Si (001) Substrate with Sub-Nano Streaky Surface: Preparation and Its Application to High-Quality Growth of GaAs Heteroepitaxial-Layer

Impact of GaN Transition Layers in the Growth of GaN Epitaxial Layer on Silicon

Two-Step Fabrication of Self-Catalyzed Ga-Based Semiconductor Nanowires on Si by Molecular-Beam Epitaxy

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

Epitaxial GaSb films directly grown on on-axis Si(001) with low defect density by MBE

Epitaxial growth of InAs/GaAs quantum dots on {113}-faceted Ge/Si (001) hollow substrate

Theoretical and Experimental Study on Epitaxial Growth of Antiphase Boundary Free GaAs on Hydrogenated On-Axis Si(001) Surfaces

Growth of GaN on γ-Al2O3/Si(001) Composite Substrates

Novel Growth and Properties of GaAs Nanowires on Si Substrates

Defect-Free GaAs/AlGaAs Core–Shell Nanowires on Si Substrates

Growth and characterization of compound semiconductor nanowires on Si

Growth of High-Quality AlGaN Epitaxial Films on Si Substrates

Improvement of morphology, structure, and optical properties of GaAs nanowires grown on Si substrates