Abstract:Photoelectrochemical(PEC) solar cells have attracted considerable attention as one of the most effective ways to utilize solar energy.As a cheap and stable semiconductor material,TiO_2 has been frequently used in the PEC solar cells.Doping is one of the most effective ways to enhance the photoelectrochemical properties of TiO_2 thin film electrodes.So far,many efforts have been made to synthesize doped TiO_2 photoelectric films to develop the photoelectrochemical performance.In this study,germanium doped TiO_2 thin films have been synthesized by sol-gel dip-coating method using butyl titanate(Ti(OC4H9)4) and tetra-n-butoxygermane(Ge[O(CH2)3CH3]4) as the titania and germania precursors,respectively.X-ray powder diffraction(XRD),scanning electron microscope(SEM) attached with energy dispersive X-ray spectroscopy(EDS),optical absorption spectra,and current-potential(I-V) curves have been studied for the prepared Ge-doped TiO_2 thin films.The results revealed that Ti1-xGexO2 solid solution formed when x=0.10,while the film exists amorphous when x=0.15.The anatase crystal structure was destroyed gradually with increasing germanium amount.Doping germanium reduced the grain size.The surface morphology of Ge-doped films showed higher particle density than that of pure TiO_2,hence increasing the active site numbers and improving the photoelectrochemical properties.The increase of Ge amount caused a gradual blue shift of optical absorption edge in UV-Vis absorption spectra.The photocurrent was enhanced with proper doping amount,owing to more active sites and comparatively better crystallinity.The maximum value of photocurrent reached 17A/m2 when germanium amount was 0.05.The mechanism of effects of Ge-doping on the photocurrent of TiO_2 thin film electrodes was also investigated.

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