Preparation and Properties of Pgo Thin Films by Pld

SM Koo,LR Zheng,QR Yin,BM Moon,KV Rao
DOI: https://doi.org/10.1080/00150199908009132
1999-01-01
Ferroelectrics
Abstract:Lead germanate, Pb5Ge3O11 (PGO), is known to be ferroelectric with a large pyroelectric property and relatively small dielectric constant. In this paper, we investigated the optimal conditions for the c-axis oriented PGO thin films. The effectiveness of oxygen (O-2) as an oxidizing agent during in-situ growth of PGO thin films on YBCO/LaAlO3(100) substrates is studied as a function of substrate temperature. Films with c-axis preferred orient can be obtained at a substrate temperature of 650 degrees C for 20min with oxygen pressure 26.6 Pa followed by subsequent annealing temperature at 400 degrees C for 30min to keep good YBCO layers.
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