Abstract:A simple procedure has been developed for the processing of silicon wafers in order to facilitate the spatially resolved growth of thin solid films on their surfaces. Specifically, a combination of silylation and UV/ozonolysis was tested as a way to control the concentration of the surface hydroxo groups required for subsequent atomic layer deposition (ALD) of metals or oxides. Water contact angle measurements were used to evaluate the hydrophilicity/hydrophobicity of the surface, a proxy for OH surface coverage, and to optimize the UV/ozonolysis treatment. Silylation with hexamethyldisilazane, trichloro(octadecyl)silane, or trimethylchlorosilane was found to be an efficient way to block the hydroxo sites and to passivate the underlying surface, and UV/O3 treatments were shown to effectively remove the silylation layer and to regain the surface reactivity. Both O3 and 185 nm UV radiation were determined necessary for the removal of the silylation layer, and additional 254 nm radiation was found to enhance the process. Attenuated total reflection-infrared absorption spectroscopy was employed to assess the success of the silylation and UV/O3 removal steps, and atomic force microscopy data provided evidence for the retention of the original smoothness of the surface. Selective growth of HfO2 films via TDMAHf + H2O ALD was seen only on the UV/O3 treated surfaces; total inhibition of the deposition was observed on the untreated silylated surfaces (as determined by x-ray photoelectron spectroscopy and ellipsometry). Residual film growth was still detected on the latter if the ALD was carried out at high temperatures (250 °C), because the silylation layer deteriorates under such harsh conditions and forms surface defects that act as nucleation sites for the growth of oxide grains (as identified by electron microscopy and scanning electron microscopy). We believe that the silylation-UV/O3 procedure advanced here could be easily implemented for the patterning of surfaces in many microelectronic applications.

Hydroxylation of Metal-Supported Sheet-Like Silica Films

Electron Stimulated Hydroxylation of a Metal Supported Silicate Film.

The Dissociated Amorphous Silica Surface: Model Development and Evaluation.

Tuning Spatial Distribution of Surface Hydroxyls on a Metal-Supported Single-Layer Silica

Evolution Mechanism of Surface Hydroxyl Groups of Silica During Heat Treatment

Synthesis of Hydrophobic Ordered Mesoporous Silica Films

Preparation of Durable Hydrophobic and Antireflective Silica Coating

Sol-Gel Preparation of HTMS-Silica Hydrophobic Coatings with High Environment-Resistance

γ-Alumina and Amorphous Silica–Alumina: Structural Features, Acid Sites and the Role of Adsorbed Water

Preparation of Organically Modified Silica Sols and Hydrophobic Films

Water Adsorption on Hydrophilic and Hydrophobic Surfaces of Silicon

Preparation and properties of hydrophobic organic-inorganic silica hybrid films

Acidity Characterization of Amorphous Silica-Alumina

Hydrolysis and Condensation of Tetraethyl Orthosilicate at the Air–Aqueous Interface: Implications for Silica Nanoparticle Formation

Tuning the Hydrophobicity of ZSM-5 Zeolites by Surface Silanization Using Alkyltrichlorosilane

Surface Orientation and Temperature Effects on the Interaction of Silicon with Water: Molecular Dynamics Simulations Using ReaxFF Reactive Force Field.

A New Route to Synthesis of Surface Hydrophobic Silica with Long-Chain Alcohols in Water Phase

Spatial resolution in thin film deposition on silicon surfaces by combining silylation and UV/ozonolysis

Water Contact Angle Dependence with Hydroxyl Functional Groups on Silica Surfaces under CO2 Sequestration Conditions.

Preparation of Hydrophobic Optical Silica Thin Film with Sol-gel Method

Preparation and Characterization of Hydrophobic Mesoporous SiO_2