Abstract:The conventional surface x-ray diffraction method [1] allows us to determine atomic arrangements of crystal surfaces and interfaces.While x-ray diffraction intensities distributed within a reciprocal lattice space are usually measured with a finetooth comb using the method, an overall image of the diffraction intensity profile is difficult to get until after such lengthy and time consuming measurement is completed.We proposed x-ray reciprocal-lattice space imaging method (X-ReSI) for straightforward understanding of 1D nanostructures such as NiO nanowires [2].The X-ReSI is a single-exposure diffraction technique which records the reciprocallattice pattern of a fixed crystalline nanostructure using a 2D detector.The fundamental idea behind the method is that the reciprocal lattice of 1D or 2D structures are an array of sheets or rods, respectively.Thus the reciprocal-lattice space can be recorded for a fixed sample with a 2D x-ray detector fixed.The typical exposure time is a few seconds to a few minutes using the 3rd generation x-ray source.We applied the method to structural evaluation of Bi nanolines being 1/8 monolayers in coverage on average.The results of the application reveal that Bi nanolines embeded in Si was found to have a 2 x n superstructure having Bi dimer bonds [3].On the other hand line structures in samples capped with an amorphous Si layer and having no cap layers still remained with a non-detectable amount of the 2 x n atomic structures.Other applications are structural determination of a Bi4Ti3O12 thinfilm and in-situ observation of a Au electrode in H2SO4.

Single-mode Dynamic X-ray Diffraction for Si and Si Nanowires on Si

General Existence of Flexural Mode Doublets in Nanowires Targeting Vectorial Sensing Applications

Ultrafast growth of single-crystalline Si nanowires

Transverse Sum-Frequency Generation In Single Semiconductor Nanowires

Studies of Fesi2/Si Quantum Dot Nano-Structures by X-Ray Bragg-Surface Diffractions (Bsd)

Controlled-Direction Growth of Planar InAsSb Nanowires on Si Substrates Without Foreign Catalysts

Fluorescent Nanowire Ring Illumination for Wide-Field Far-Field Subdiffraction Imaging

Realizing In-Plane Surface Diffraction by X-Ray Multiple-Beam Diffraction with Large Incidence Angle

Raman Scattering As a Probe of Phonon Confinement and Surface Optical Modes in Semiconducting Nanowires

Three-Wave Resonance Grazing Incidence X-Ray Diffraction: A Novel Method for Direct Phase Determination of Surface In-Plane Reflections

Depth profiles of the interfacial strains of Si 0.7 Ge 0.3 /Si using three-beam Bragg-surface diffraction

Crystal Growth of Si Nanowires and Formation of Longitudinal Planar Defects

Theoretical and experimental electron diffraction intensity maps for single crystal silicon from an ultrafast source

In-situ TEM observation of preferential amorphization in single crystal Si nanowire

Electron Microscopy Probing Electron-Photon Interactions in SiC Nanowires with Ultrawide Energy and Momentum Match.

Reflection Surface X-Ray Diffraction Patterns: K-Space Images

Quantitative Agreement Between Dynamical Rocking Curves in Ultrafast Electron Diffraction for X-Ray Lasers.

Diffraction imaging for in-situ characterization of double-crystal x-ray monochromators

TEM Investigation of Asymmetric Deposition-Driven Crystalline-to-Amorphous Transition in Silicon Nanowires

Real- and Q-space travelling: multi-dimensional distribution maps of crystal-lattice strain (∊044) and tilt of suspended monolithic silicon nanowire structures

An Algorithm for Calculating Diffraction Profiles of 2θ Scans for Multiple Diffraction from Crystals and Thin Films